Impacts of Zr content of HfZrOx-Based FeFET memory on resilience towards proton radiation

High energy/fluence (10 MeV/2.5 x 10(14) ions center dot cm(-2)) proton radiation effects on the performance of HfZrOx (HZO)-based ferroelectric field effect transistors (FeFETs) memory with various Zr content were studied for the first time. As the Zr content reaches 67 % (tetragonal-phase rich), degraded de-trapping, switching speed, memory window (MW) and polarization-voltage slope occur due to more oxygen vacancies (Vo) generation upon proton radiation resulting from intrinsically higher amount Vo. For FeFETs (Zr: 50 %), irradiated devices exhibit a MW of - 2.4 V while other characteristics show almost independent of radiation. The irradiated FeFETs also reveal good endurance up to 10(9) cycles by recovery and 10-year retention. The higher resilience towards radiation for FeFETs (Zr: 50 %) is obtained since Vo redistribution is dominant with negligible Vo generation, making it eligible for space missions.

Automated summary

This study investigates the effects of high energy/fluence proton radiation on the performance of HfZrOx-based FeFETs memory with different Zr content. The results show that the characteristics of FeFETs are influenced by proton radiation, and the extent of the influence depends on the Zr content. FeFETs with 50% Zr content exhibit minimal changes in memory window and demonstrate good endurance and retention performance.