Transparent quantum dot light-emitting diodes with a current focusing structure

We report transparent quantum dot light-emitting diodes with a current focusing structure. By depositing a SiO2 thin film to form the current focusing structure, the DC density and luminance significantly increased to over 8700 mA/cm(2) and 360 000 cd/m(2), respectively. The emission spectra and current densities as functions of SiO2 thickness and aperture width have been investigated and discussed. This current focusing design is proved effective and can be further applied to other planar light-emitting diode devices.

Automated summary

We present transparent quantum dot light-emitting diodes (QLEDs) with a current focusing structure. By depositing a SiO2 thin film to create the current focusing structure, we achieved significantly increased DC density and luminance, reaching values of over 8700 mA/cm(2) and 360,000 cd/m(2) respectively. The impact of SiO2 thickness and aperture width on emission spectra and current densities was investigated. The current focusing design demonstrates its effectiveness and potential application in other planar LED devices.