Ferroelectric Al1-xBxN thin films integrated on Si

Article Engineering, Electrical & Electronic

Engineering Strain and Texture in Ferroelectric Scandium-Doped Aluminium Nitride

Sean R. C. McMitchell et al.

Summary: Ferroelectricity was achieved in 15 nm thick Al1-xScxN films for the first time through materials and interfacial engineering. Bottom electrodes were optimized through modification of strain state and texture in the films, with Pt bottom interfaces showing the widest doping window and lowest leakage. Mo bottom interfaces promoted mixed texture, leading to reduced breakdown E-field and doping window. Top electrode stacks were found to modify strain state and leakage, enabling full interfacial engineering. Mo top electrode interfaces reduced the coercive electric field, allowing strain engineering and application in memory devices.

ACS APPLIED ELECTRONIC MATERIALS (2023)

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Article Materials Science, Multidisciplinary

Ferroelectricity in boron-substituted aluminum nitride thin films

John Hayden et al.

Summary: This manuscript demonstrates the ferroelectricity in B-substituted AlN thin films and the relationship between structure and properties through first-principles calculations. Experimental results show that films with B concentrations ranging from 0.02 to 0.15 exhibit ferroelectric switching behavior, while degradation of ferroelectric behavior occurs when B concentrations exceed 0.15.

PHYSICAL REVIEW MATERIALS (2021)

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Article Physics, Applied

On the exceptional temperature stability of ferroelectric Al1-xScxN thin films

Md Redwanul Islam et al.

Summary: This study found that the ferroelectric-to-paraelectric transition temperature of Al1-xScxN thin film can exceed 1100 degrees C, surpassing the transition temperature of virtually any other thin film ferroelectric. Through high-temperature X-ray diffraction and permittivity measurements, it was discovered that the wurtzite-type structure of Al0.73Sc0.27N remains stable during the entire 1100 degrees C annealing cycle.

APPLIED PHYSICS LETTERS (2021)

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Article Physics, Applied

Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films

Wanlin Zhu et al.

Summary: This study reveals the temperature dependence of ferroelectric switching in Al0.84Sc0.16N, Al0.93B0.07N, and AlN thin films, showing strong temperature dependence on polarization reversal and coercive field, while minimal temperature dependence on remanent polarization values. The relative permittivity increased within a certain temperature range, and polarization reversal was confirmed through piezoelectric coefficient analysis and chemical etching. Models based on thermal activation suggest a distribution of pinning sites or nucleation barriers regulates the switching behavior with an average activation energy near 28 meV.

APPLIED PHYSICS LETTERS (2021)

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Article Physics, Applied

Ferroelectrics everywhere: Ferroelectricity in magnesium substituted zinc oxide thin films

Kevin Ferri et al.

Summary: Ferroelectricity is demonstrated in Mg-substituted ZnO thin films with wurtzite structure, grown by dual-cathode reactive magnetron sputtering on specific substrates. Increasing Mg content leads to both a decrease in c-lattice parameter and an increase in a-lattice parameter, maintaining a nearly constant c/a axial ratio. The films display ferroelectric switching properties with high remanent polarizations and low coercive fields within a specific range of Mg content.

JOURNAL OF APPLIED PHYSICS (2021)

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Article Physics, Applied