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Jianping Shi et al.
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Xiaoning Sun et al.
MATERIALS RESEARCH EXPRESS (2021)
Chemical vapor deposition and temperature-dependent Raman characterization of two-dimensional vanadium ditelluride
Mongur Hossain et al.
RSC ADVANCES (2021)
Multimorphism and gap opening of charge-density-wave phases in monolayer VTe2
Meizhuang Liu et al.
NANO RESEARCH (2020)
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Wei Chen et al.
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Phase change vanadium dioxide light sensors
Sumaiya Kabir et al.
APPLIED MATERIALS TODAY (2020)
Subthreshold firing in Mott nanodevices
Javier del Valle et al.
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Multiple Transitions of Charge Density Wave Order in Epitaxial Few-Layered 1T'-VTe2 Films
Tian Dai et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2019)
Observation of the Kondo Effect in Multilayer Single-Crystalline VTe2 Nanoplates
Hongtao Liu et al.
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Charge Density Wave Phase Transitions in Large-Scale Few-Layer 1T-VTe2 Grown by Molecular Beam Epitaxy
Xingyuan Ma et al.
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Joule heating driven infrared switching in flexible VO2 nanoparticle films with reduced energy consumption for smart windows
Nan Shen et al.
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Synthesis of Ultrathin Metallic MTe2 (M = V, Nb, Ta) Single-Crystalline Nanoplates
Jia Li et al.
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Recent progress in the phase-transition mechanism and modulation of vanadium dioxide materials
Zewei Shao et al.
NPG ASIA MATERIALS (2018)
2D transition metal dichalcogenides
Sajedeh Manzeli et al.
NATURE REVIEWS MATERIALS (2017)
A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal-Insulator Transition
Wuhong Xue et al.
ADVANCED MATERIALS (2017)
Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices
Dasheng Li et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Electric field-induced transport modulation in VO2 FETs with high-k oxide/organic parylene-C hybrid gate dielectric
Tingting Wei et al.
APPLIED PHYSICS LETTERS (2016)
Fast electronic resistance switching involving hidden charge density wave states
I. Vaskivskyi et al.
NATURE COMMUNICATIONS (2016)
Multidimensional Simulation of Threshold Switching in NbO2 Based on an Electric Field Triggered Thermal Runaway Model
Carsten Funck et al.
ADVANCED ELECTRONIC MATERIALS (2016)
Voltage-controlled switching and thermal effects in VO2 nano-gap junctions
Arash Joushaghani et al.
APPLIED PHYSICS LETTERS (2014)
Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2
Suhas Kumar et al.
ADVANCED MATERIALS (2013)
On the origin of charge-density waves in select layered transition-metal dichalcogenides
K. Rossnagel
JOURNAL OF PHYSICS-CONDENSED MATTER (2011)
Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer
Dmitry Ruzmetov et al.
JOURNAL OF APPLIED PHYSICS (2010)
Effect of pressure on the electric-field-induced resistance switching of VO2 planar-type junctions
Joe Sakai et al.
PHYSICAL REVIEW B (2008)