Phase transition induced threshold resistive switching in two-dimensional VTe2 nanosheets for Boolean logic operations

Vanadium chalcogenides have been extensively studied owing to the diverse crystallographic structures with various stoichiometric ratios. The metal-to-insulator transition (MIT) widely reported in vanadium chalcogenides is a rapid reversible phase transition that requires small energy, demonstrating potential applications in memory devices. In this work, two-dimensional (2D) vanadium telluride (VTe2) nanosheets are prepared by the chemical vapor deposition method. The synthesized VTe2 nanosheets exhibit volatile threshold switching (TS) behaviors due to the MIT phase transition, which can be further confirmed by the temperature dependent TS behaviors. The TS memristor demonstrates good stability and high reliability with up to 1000 continuous and repeatable writing/erasing operations. Furthermore, based on the TS behaviors, the fabricated memristor can be utilized to implement basic Boolean logic operations of OR, AND, and NOT. This study not only demonstrates the TS behaviors in the 2D VTe2 nanosheets owing to the MIT phase transition but also shows the potential applications of the TS devices in Boolean logic operations.

Automated summary

In this study, two-dimensional vanadium telluride (VTe2) nanosheets were prepared by chemical vapor deposition, showing metal-to-insulator transition (MIT) behavior and threshold switching (TS) characteristics. The synthesized VTe2 nanosheets exhibited good stability and reliability with up to 1000 continuous writing/erasing operations. Additionally, the TS behavior allowed the fabricated memristor to perform basic Boolean logic operations of OR, AND, and NOT. This research not only demonstrated the TS behavior of 2D VTe2 nanosheets due to the MIT phase transition but also showcased the potential applications of TS devices in Boolean logic operations.