Improved sputtering method to deposit high conducting doped ZnO films without substrate heating

Magnetron sputtering deposition with Zn supply was utilized to deposit Ga-doped ZnO (GZO) films to minimize acceptor-like crystalline defects. This deposition technique significantly increased the carrier concentration of GZO films. In addition, the impact of partial oxygen pressure on the deposition atmosphere on carrier concentration was remarkably reduced. As a result, the resistivity of the films decreased to as low as 4 x 10-4 omega cm without the need for intentional substrate heating. Consequently, the deposition with Zn supply shows great potential for producing ZnO-based transparent conducting films with practically low resistivity on polymer substrates that have lower heat tolerance.

Automated summary

Magnetron sputtering deposition with Zn supply was used to deposit Ga-doped ZnO (GZO) films, resulting in minimized crystalline defects and significantly increased carrier concentration. The impact of partial oxygen pressure on the deposition atmosphere on carrier concentration was reduced, leading to films with resistivity as low as 4 x 10-4 omega cm without intentional substrate heating. This deposition technique shows great potential for producing ZnO-based transparent conducting films with low resistivity on polymer substrates with lower heat tolerance.