Prospects of mist CVD for fabrication of beta-Ga2O3 MESFETs on beta-Ga2O3 (010) substrates

Mist CVD was applied to grow the ss-Ga2O3 channel layer of a MESFET on a semi- insulating ss-Ga(2)o(3) (010) substrate. The mobility and carrier concentration of the channel layer were 80 cm(2) V-1 s(-1) and 6.2 x 10(17) cm(-3), respectively. The device exhibited a pinch-off characteristic with a threshold gate voltage of -9 V, and the maximum drain current was 240 mA mm(-1). The maximum transconductance was 46 mS mm(-1) and the onresistance was 30 Omega mm. This device performance suggests that mist CVD is a potential growth technology capable of providing low-cost devices in the future. (c) 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd

Automated summary

Mist CVD was used to grow the ss-Ga2O3 channel layer on a semi-insulating ss-Ga(2)o(3) (010) substrate. The mobility and carrier concentration of the channel layer were 80 cm(2) V-1 s(-1) and 6.2 x 10(17) cm(-3), respectively. The device exhibited a pinch-off characteristic with a threshold gate voltage of -9 V, and showed promising performance for low-cost devices.