期刊
APPLIED PHYSICS EXPRESS
卷 16, 期 9, 页码 -出版社
IOP Publishing Ltd
DOI: 10.35848/1882-0786/acf5c8
关键词
interface roughness; semiconductor nanosheets; self-consistent Born Approximation; transmission function; localization; coherent transport; mean free path
A numerical calculation method is proposed to compute the transport mean free path of semiconductor nanosheets with surface roughness. The method extracts the mean free path from the statistical average of the logarithm of the dimensionless resistance. It is applicable to a wide range of channel length and shows a dependence on the channel thickness.
A numerical calculation method is proposed to compute the transport mean free path of single-mode semiconductor nanosheets with surface roughness, where the mean free path is extracted from the statistical average of the logarithm of the dimensionless resistance. The present method requires only a computationally less demanding coherent transmission probability, and is applicable to wider channel length ranges from the quasi-ballistic to the localization regime. The channel thickness, T w, dependence of the mean free path calculated by the proposed method within the effective mass approximation shows the well-known T W 6 dependence for thicker T w, while it becomes weaker for thinner T w.
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