期刊
APPLIED PHYSICS EXPRESS
卷 16, 期 10, 页码 -出版社
IOP Publishing Ltd
DOI: 10.35848/1882-0786/acfd07
关键词
beta-Ga2O3; heteroepitaxial growth; singlecrystalline diamond; RF magnetron sputtering; wide bandgap semiconductor
In this study, the heteroepitaxial growth of β-Ga2O3 thin films on single crystalline diamond (111) wafers using RF magnetron sputtering is demonstrated. The obtained thin films show a single monoclinic (beta-phase) structure with a monofamily { 2 over bar 01} plane. XRD pole figure analysis confirms the successful epitaxial growth of β-Ga2O3 on diamond. This research provides valuable insights for the future development of scalable β-Ga2O3/diamond heterostructures with high performance and effective self-thermal management.
In this work, we demonstrate the first achievement in heteroepitaxial growth of beta-Ga2O3 thin films on single crystalline diamond (111) wafers using RF magnetron sputtering. A single monoclinic (beta-phase) structure with a monofamily { 2 over bar 01} plane was obtained. XRD pole figure shows ( 2 02) and (002) textures of the ( 2 01) beta-Ga2O3 plane parallel to (111) diamond with six distinct rotational domains, confirming successful epitaxial growth. Collectively, this research provides valuable insights into the epitaxial growth of beta-Ga2O3 on diamond via sputtering, paving the way for scalable beta-Ga2O3 /diamond heterostructures for future electronic and optoelectronic applications with not only high performance but also effective self-thermal management.
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