Temperature-dependent current-voltage characteristics of p-GaSe0.75S0.25/n-Si heterojunction

GaSe0.75S0.25 having layered structure is a potential semiconductor compound for optoelectronics and two-dimensional materials technologies. Optical and structural measurements of the GaSe0.75S0.25 thin film grown on the glass substrate showed that the compound has hexagonal structure and band energy of 2.34 eV. GaSe0.75S0.25 thin film was also grown on the silicon wafer and p-GaSe0.75S0.25/n-Si heterojunction was obtained. To make the electrical characterization of this diode, temperature-dependent current-voltage (I-V) measurements were carried out between 240 and 360 K. Room temperature ideality factor and barrier height of the device were determined from the analyses of I-V plot as 1.90 and 0.87 eV, respectively. Temperature-dependent plots of these electrical parameters showed that the ideality factor decreases from 2.19 to 1.77, while barrier height increases to 0.94 from 0.71 eV when the temperature was increased from 240 to 360 K. The conduction mechanism in the heterojunction was studied considering the Gaussian distribution due to presence of inhomogeneity in barrier height. The analyses presented the mean zero-bias barrier height, zero-bias standard deviation, and Richardson constant.

Automated summary

GaSe0.75S0.25, as a potential semiconductor compound, shows hexagonal structure and has a band energy of 2.34 eV. The GaSe0.75S0.25 thin film grown on a glass substrate was also successfully obtained on a silicon wafer, forming a p-GaSe0.75S0.25/n-Si heterojunction. Temperature-dependent current-voltage (I-V) measurements were conducted to characterize the electrical properties of the heterojunction, revealing a decrease in the ideality factor and an increase in the barrier height with increasing temperature. The conduction mechanism was investigated considering the Gaussian distribution of barrier height inhomogeneity.