Neutron-induced damage simulations using MCNP6 and SRIM codes: Beyond neutron transmutation doping of silicon

When a high degree of consistency and precision in dopant (phosphorous) distribution is required, the NTD technique is used, but neutron irradiation made damages in the silicon. This study focused on neutron-induced damage to silicon, as well as phosphorus produced inside the irradiated samples. The evolution of the resistivity and the surface morphology versus Displacement per Atom (DPA) was determined in addition, it used the Monte Carlo Neutron Transport simulation MCNP6 and SRIM codes for estimation of DPA. In this work, among the most important results obtained from experimental and simulation methods, it was found that: resistivity and RMS increased with an increasing DPA, this phenomenon occurred after neutron irradiation. The experimental results show good agreement with the simulation data. Furthermore, the enhancement of irradiation times leads the resistivity values to attain saturation. This later reaches a stability value above 11 x 1016 Displacement /cm3 between 0.74 and 3.96 x 1018n/cm2.

Automated summary

This study investigates the damage caused by neutron irradiation on silicon and the production of phosphorus in the irradiated samples. The resistance and surface morphology were found to increase with increasing Displacement per Atom (DPA) after neutron irradiation.