Dibenzothiophene Sulfone-Based Ambipolar-Transporting Blue-Emissive Organic Semiconductors Towards Simple-Structured Organic Light-Emitting Transistors

The development of blue-emissive ambipolar organic semiconductor is an arduous target due to the large energy gap, but is an indispensable part for electroluminescent device, especially for the transformative display technology of simple-structured organic light-emitting transistor (SS-OLET). Herein, we designed and synthesized two new dibenzothiophene sulfone-based high mobility blue-emissive organic semiconductors (DNaDBSOs), which demonstrate superior optical property with solid-state photoluminescent quantum yield of 46-67 % and typical ambipolar-transporting properties in SS-OLETs with symmetric gold electrodes. Comprehensive experimental and theoretical characterizations reveal the natural of ambipolar property for such blue-emissive DNaDBSOs-based materials is ascribed to a synergistic effect on lowering LUMO level and reduced electron injection barrier induced by the interfacial dipoles effect on gold electrodes due to the incorporation of appropriate DBSO unit. Finally, efficient electroluminescence properties with high-quality blue emission (CIE (0.179, 0.119)) and a narrow full-width at half-maximum of 48 nm are achieved for DNaDBSO-based SS-OLET, showing good spatial control of the recombination zone in conducting channel. This work provides a new avenue for designing ambipolar emissive organic semiconductors by incorporating the synergistic effect of energy level regulation and molecular-metal interaction, which would advance the development of superior optoelectronic materials and their high-density integrated optoelectronic devices and circuits. Two new dibenzothiophene sulfone-based organic semiconductors were designed and synthesized. They demonstrate a high solid-state photoluminescence quantum yield of 46-67 % and typical ambipolar transport character in simple-structured organic light-emitting transistors. High quality blue electroluminescence CIE (0.179, 0.119) with a full-width at half-maximum of 48 nm is achieved.image

Automated summary

Two new dibenzothiophene sulfone-based organic semiconductors with high solid-state photoluminescence quantum yield and typical ambipolar transport character in simple-structured organic light-emitting transistors were designed and synthesized. The ambipolar property of these materials is attributed to the interfacial dipoles effect on gold electrodes induced by the incorporation of appropriate DBSO unit. The achievement of high-quality blue electroluminescence in the SS-OLET demonstrates good spatial control of the recombination zone in the conducting channel.