Electrospun Highly Aligned IGZO Nanofiber Arrays with Low-Thermal-Budget for Challenging Transistor and Integrated Electronics

Metal oxide field-effect transistors (MOFETs) represent a promising technology for applications in existing but alsoemerging large-area electronics. Simultaneously, the rise of 1D nanomaterials with unique properties, represented by nanofibers (NFs), has also energized research. Thus, developing 1D nanofiber networks (NFNs) to act as the potential building blocks for use in fundamental elements of transistors is considered to be a promising approach torealize high-performance 1D electronics. However, high processing temperatures and disordered nanofiber distribution represent two remaining technical challenges. Here, electrospun highly aligned IGZO (a-IGZO) nanofiber arrays with low-thermal-budget of 350 degrees C and impressive device characteristics are achieved, including a mu FE of 5.63 cm2 V-1 s-1 and superior on/off current ratio of approximate to 107. When ALD-derived high-k HfAlOx thin films are employed as gate dielectrics, the source/drain voltage (VDS) can be substantially reduced by ten times to a range of only 03 V, along with a three times improvement in mobility to a respectable value of 15.9 cm2 V-1 s-1. Successful integrations of logic operation, sensor, and flexible devices implies the potential prospect of a-IGZO NFN FETs in multifunctional electronics. The strategy for combining cryogenic processes and parallel arrays provides a feasible and reliable route in building future low-power, high-performance flexible electronics. Electrospinning-derived aligned IGZO (a-IGZO) NFN FETs are achieved. The superior electrical performance of the transistors is comparable to devices of the same type fabricated in high-temperature processes. The successful assembly of multi-scenario devices based on a-IGZO FETs also confirms thepotential of electrospun highly oriented inorganic fiber arrays obtained in low-temperature processes forapplications in nano-integrated circuits andvarious functional devices.image

Automated summary

Metal oxide field-effect transistors (MOFETs) and one-dimensional nanofiber networks (NFNs) have great potential in large-area electronics. This study achieved low-temperature processing and impressive device characteristics using electrospun highly aligned IGZO nanofiber arrays. The use of high-k HfAlOx thin films as gate dielectrics further improved the transistor performance.