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Two-Dimensional Memtransistors for Non-Von Neumann Computing: Progress and Challenges

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ADVANCED FUNCTIONAL MATERIALS
卷 -, 期 -, 页码 -

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WILEY-V C H VERLAG GMBH
DOI: 10.1002/adfm.202308129

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memtransistors; two-dimensional materials; bio-inspired computing; stochastic computing

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The increased demand for high-performance computing systems has highlighted the limitations of the current von Neumann architecture. To address this, developing alternative computing primitives that offer faster processing speed and lower energy consumption is crucial. Recent developments in 2D-memtransistor devices, a new type of multiterminal device, have shown promising potential in overcoming these limitations. This article provides an overview of these devices, their fundamental mechanisms, and their applications in various fields.
The increased demand of high-performance computing systems has exposed the inherent limitations of the current state-of-the-art von Neumann architecture. Therefore, developing alternate computing primitives that can offer faster computing speed with low energy expenditure is critical. In this context, while several non-volatile memory (NVM) devices such as synaptic transistors, spintronic devices, phase change memory (PCM), and memristors have been demonstrated in the past, their two-terminal nature necessitates additional peripheral elements that increase area and energy overhead. Recently, a new multiterminal device prototype known as a memtransistor has shown tremendous potential to overcome these limitations through exceptional control of the gate electrostatics as enabled by 2D channel materials. In this perspective, a brief overview of recent developments in 2D-memtransistor devices is provided, including their fundamental operational mechanisms and the role of defects in enabling multiple NVM states and optical photoresponse. An overview of their implementation in the context of neuromorphic, probabilistic, information security, and edge-sensing primitives is also provided. Finally, a futuristic perspective is provided looking toward their successful large-scale technological integration. This article delves into the latest developments in 2D-memtransistor devices, shedding light on the essential operational mechanisms that allow for multiple non-volatile memory states. Following this, the article offers an in-depth review of how these devices are applied in neuromorphic, probabilistic, information security, and edge-sensing areas. The discussion further addresses current challenges and presents a forward-looking strategy for incorporating them into large-scale technological applications.image

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