4.6 Article

A High-Resolution Versatile Focused Ion Implantation Platform for Nanoscale Engineering

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Review Materials Science, Multidisciplinary

Recent Progress on Plasmonic and Dielectric Chiral Metasurfaces: Fundamentals, Design Strategies, and Implementation

Hafiz Saad Khaliq et al.

Summary: Researchers have been exploring ways to artificially design chiral structures and materials, such as metamaterials and metasurfaces, which exhibit unique optical properties for various applications. Metasurfaces, comprised of symmetry-breaking structures, provide a more convenient solution for planar chiral optics. Plasmonic chiral metasurfaces are suitable for applications requiring high confinement and near-field enhancement, while dielectric chiral metasurfaces are ideal for wide wavelength ranges and low losses. This review summarizes recent progress on plasmonic and dielectric chiral metasurfaces, including fundamental concepts, design strategies, and applications in holographic displays, imaging and sensing, and detection, as well as the role of machine learning-based design approaches.

ADVANCED OPTICAL MATERIALS (2023)

Article Chemistry, Multidisciplinary

High-Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Vigneshwaran Chandrasekaran et al.

Summary: Focused ion beam implantation enables precise placement of defect centers in wide bandgap semiconductors at nanometer scale. A scalable technique is demonstrated for creating single defects in commercial grade silicon carbide using repeated low dose implantation and in situ photoluminescence evaluation. An array of 9 single defects in 13 targeted locations is successfully created, achieving a yield of approximately 70%, which is significantly higher than traditional single pass ion implantation.

ADVANCED SCIENCE (2023)

Article Chemistry, Multidisciplinary

Deterministic Shallow Dopant Implantation in Silicon with Detection Confidence Upper-Bound to 99.85% by Ion-Solid Interactions

Alexander M. Jakob et al.

Summary: This study discusses the material choice of silicon chips containing arrays of single dopant atoms for classical and quantum devices, as well as the method of near-surface implantation of single ions and the associated physics model and limiting factors.

ADVANCED MATERIALS (2022)

Article Multidisciplinary Sciences

Wafer-scale nanofabrication of telecom single-photon emitters in silicon

Michael Hollenbach et al.

Summary: Researchers demonstrate the controlled fabrication of telecom-wavelength quantum emitters in silicon wafers using focused ion beams, providing a viable pathway for scalable photonic quantum processors.

NATURE COMMUNICATIONS (2022)

Article Materials Science, Multidisciplinary

Single Ion Implantation of Bismuth

Nathan Cassidy et al.

Summary: This study presents results from a focused ion beam instrument designed for single ion implantation for the fabrication of qubits for quantum technologies. The detection of secondary electrons generated upon each ion impact is used to accurately count the impacts. It is found that a detection efficiency of 89% can be achieved for 50 keV implants of Bi++ ions into silicon, exceeding the success rate of random implantation.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2021)

Review Physics, Multidisciplinary

Creation of Silicon-Vacancy Color Centers in Diamond by Ion Implantation

S. Lagomarsino et al.

Summary: Silicon-vacancy (SiV) centers in diamond are being increasingly studied for their potential applications in quantum communication and sensing. Different fabrication methods can influence the optical properties of SiV centers, while polycrystalline micro and nanostructures are of interest for nano-optics applications.

FRONTIERS IN PHYSICS (2021)

Article Materials Science, Coatings & Films

Evaluation of the accuracy of stopping and range of ions in matter simulations through secondary ion mass spectrometry and Rutherford backscattering spectrometry for low energy heavy ion implantation

Michael Titze et al.

Summary: The freely available SRIM code is used for evaluating ion beam ranges and depth profiles. Experimental results show that SRIM simulations systematically overestimate ion beam ranges, especially for higher ion implantation energies. However, for the lowest energy implantation investigated, up to a 25% error was found between the SRIM simulation and the measured range, with ion straggle showing consistent agreement between simulation and experimental results.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2021)

Article Physics, Condensed Matter

Error Rates in Deterministic Ion Implantation for Qubit Arrays

B. N. Murdin et al.

Summary: Theoretical error rates were investigated in deterministic ion implantation using an ion beam controlled by a Poisson point process with an impact-counting detector. Approximations were made to identify the greatest need for engineering effort in spots with small error rates for implanting ions. The study also examined experimental efforts to measure these parameters and their uncertainties.

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2021)

Article Multidisciplinary Sciences

Arrays of Si vacancies in 4H-SiC produced by focused Li ion beam implantation

Shojan P. Pavunny et al.

Summary: Point defects in SiC are an ideal platform for quantum information and sensing applications due to their long spin coherence times, optical spin initialization, and spin-dependent fluorescence readout. The precise spatial patterning of arrays of silicon vacancy emitters has been demonstrated in an epitaxial 4H-SiC layer through mask-less focused ion beam implantation, with scalable and reproducible defect generation achieved.

SCIENTIFIC REPORTS (2021)

Article Multidisciplinary Sciences

Controlled generation of luminescent centers in hexagonal boron nitride by irradiation engineering

M. Fischer et al.

Summary: The study explores the influence of kinetic energy and irradiation fluence on the generation of luminescent centers in two-dimensional hexagonal boron nitride materials, with a fivefold enhancement observed with increasing fluence. Molecular dynamics simulations clarify the generation mechanism and microscopic nature of these centers, with VNCB and V-B(-) identified as the most likely formed centers. Ab initio calculations of their optical properties show excellent agreement with experimental results, providing insights into the microscopic nature of quantum emitters.

SCIENCE ADVANCES (2021)

Article Physics, Multidisciplinary

Quantum Control of the Tin-Vacancy Spin Qubit in Diamond

Romain Debroux et al.

Summary: The study demonstrates multi-axis coherent control of the SnV spin qubit through all-optical stimulated Raman drive, confirming its coherent access and revealing spin dephasing time and spin coherence time. By integrating SnV into photonic nanostructures, it becomes a competitive spin-photon building block for quantum networks.

PHYSICAL REVIEW X (2021)

Article Physics, Multidisciplinary

Fabrication of 15NV- centers in diamond using a deterministic single ion implanter

Karin Groot-Berning et al.

Summary: This study demonstrates the creation of NV centers in diamond using a deterministic single ion source, with a conversion efficiency of about 0.6%. The experiment involves laser-cooling and extraction of single molecular ions in a Paul trap to implant them into a diamond substrate.

NEW JOURNAL OF PHYSICS (2021)

Review Chemistry, Multidisciplinary

Recent advances in focused ion beam nanofabrication for nanostructures and devices: fundamentals and applications

Ping Li et al.

Summary: The article systematically summarizes and analyzes various factors related to FIB nanofabrication for the fabrication of 3D nanostructures and devices, including mechanisms, instruments, processes, and typical applications. Additionally, it highlights the current challenges and future development trends in the field of FIB nanofabrication.

NANOSCALE (2021)

Article Physics, Applied

Incorporation of erbium ions into thin-film lithium niobate integrated photonics

Sihao Wang et al.

APPLIED PHYSICS LETTERS (2020)

Article Nanoscience & Nanotechnology

Generation of Spin Defects in Hexagonal Boron Nitride

Mehran Kianinia et al.

ACS PHOTONICS (2020)

Article Nanoscience & Nanotechnology

Imaging and milling resolution of light ion beams from helium ion microscopy and FIBs driven by liquid metal alloy ion sources

Nico Klingner et al.

BEILSTEIN JOURNAL OF NANOTECHNOLOGY (2020)

Article Chemistry, Multidisciplinary

Direct-Write Lithiation of Silicon Using a Focused Ion Beam of Li+

William R. McGehee et al.

ACS NANO (2019)

Article Physics, Multidisciplinary

Deterministic Single-Ion Implantation of Rare-Earth Ions for Nanometer-Resolution Color-Center Generation

Karin Groot-Berning et al.

PHYSICAL REVIEW LETTERS (2019)

Article Materials Science, Multidisciplinary

Focused Ion Beam Direct Fabrication of Subwavelength Nanostructures on Silicon for Multicolor Generation

Vivek Garg et al.

ADVANCED MATERIALS TECHNOLOGIES (2018)

Article Instruments & Instrumentation

Ion implantation for deterministic single atom devices

J. L. Pacheco et al.

REVIEW OF SCIENTIFIC INSTRUMENTS (2017)

Review Materials Science, Multidisciplinary

Lithographically Defined Graphene Patterns

Yiqun Zheng et al.

ADVANCED MATERIALS TECHNOLOGIES (2017)

Review Physics, Applied

Liquid metal alloy ion sources-An alternative for focussed ion beam technology

Lothar Bischoff et al.

APPLIED PHYSICS REVIEWS (2016)

Article Materials Science, Multidisciplinary

Advances in source technology for focused ion beam instruments

Noel S. Smith et al.

MRS BULLETIN (2014)

Article Engineering, Electrical & Electronic

Multispecies focused ion beam lithography system and its applications

Sven Bauerdick et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2013)

Article Engineering, Electrical & Electronic

Probe current distribution characterization technique for focused ion beam

Shida Tan et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2012)

Article Materials Science, Multidisciplinary

Ion emission and electric field characteristics in the liquid metal ion source with a new suppressor electrode

Byeong Seong Cho et al.

CURRENT APPLIED PHYSICS (2011)

Proceedings Paper Physics, Applied

First Results From A Multi-Ion Beam Lithography And Processing System At The University Of Florida

Brent Gila et al.

APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY: TWENTY-FIRST INTERNATIONAL CONFERENCE (2011)

Article Materials Science, Multidisciplinary

Comparison of bismuth emitting liquid metal ion sources

L. Bischoff et al.

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2010)

Article Nanoscience & Nanotechnology

Performance enhancement of semiconductor devices by control of discrete dopant distribution

M. Hori et al.

NANOTECHNOLOGY (2009)

Article Physics, Applied

Room temperature single ion detection with Geiger mode avalanche diode detectors

J. A. Seamons et al.

APPLIED PHYSICS LETTERS (2008)

Article Chemistry, Physical

Long-life bismuth liquid metal ion source for focussed ion beam micromachining application

P. Mazarov et al.

APPLIED SURFACE SCIENCE (2008)

Article Multidisciplinary Sciences

Enhancing semiconductor device performance using ordered dopant arrays

T Shinada et al.

NATURE (2005)

Article Instruments & Instrumentation

Ion beam induced charge and numerical modeling study of novel detector devices for single ion implantation

T Hopf et al.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2005)

Article Physics, Condensed Matter

Characteristics of erbium-ions-producing liquid metal ions sources

T Ganetsos et al.

PHYSICA B-CONDENSED MATTER (2003)

Review Chemistry, Multidisciplinary

Atomic weights of the elements:: Review 2000 -: (IUPAC technical report)

JR De Laeter et al.

PURE AND APPLIED CHEMISTRY (2003)

Article Instruments & Instrumentation

Ion beam technologies in the semiconductor world (plenary)

JM Poate et al.

REVIEW OF SCIENTIFIC INSTRUMENTS (2002)