4.8 Article

Band-Edge Energy Levels of Dynamic Excitons in Cube-Shaped CdSe/CdS Core/Shell Nanocrystals

期刊

ACS NANO
卷 17, 期 21, 页码 21962-21972

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.3c08377

关键词

band-edge electronic structure; semiconductor core/shellnanocrystal; photochemical doping; charged exciton; single-dot spectroscopy

向作者/读者索取更多资源

The electron-hole pair in a CdSe/CdS core/shell nanocrystal shows different behavior under different confinement regimes. The reduction of optical bandgap is mainly caused by the change in the band-edge electron level. Additionally, the shift of electron levels can switch the energy order of transitions. The thermal distribution of electrons follows number-counting statistics.
An electron-hole pair in a cube-shaped CdSe/CdS core/shell nanocrystal exists in the form of dynamic excitons across the strongly and weakly confined regimes under ambient temperatures. Photochemical doping is applied to distinguish the band-edge electron and hole levels, confirming an effective mass model with universal constants. Reduction of the optical bandgap upon epitaxy of the CdS shells is caused by lowering the band-edge electron level and barely affecting the band-edge hole level. Similar shifts of the electron levels, yet retaining the hole levels, can switch the order in energy of the three lowest-energy transitions. Thermal distribution of 1-4 electrons among the two thermally accessible electron levels follows number-counting statistics, instead of Fermi-Dirac distribution.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据