Adsorption-Controlled Growth and Magnetism in Epitaxial SrRuO3 Films

Controlling defect densities in SrRuO3 films is the cornerstone for probing the intricate relationship among its structural, electrical, and magnetic properties. We combine film growth, electrical transport, and magnetometry to demonstrate the adsorption-controlled growth of phase-pure, epitaxial, and stoichiometric SrRuO3 films on SrTiO3 (001) substrates using solid source metal-organic molecular beam epitaxy. Across the growth window, we show that the anomalous Hall curves arise from two distinct magnetic domains. Domains with similar anomalous Hall polarities generate the stepped feature observed within the growth window, and those with opposite polarities produce the hump-like feature present exclusively in the highly Ru-poor film. We achieve a residual resistivity ratio (RRR =rho(300K)/rho(2K)) of 87 in a 50 nmthick, coherently strained, and stoichiometric SrRuO3 film, the highest reported value to date on SrTiO3 (001) substrates. We hypothesize further improvements in the RRR through strain engineering to control the tetragonal-to-orthorhombic phase transformation and the domain structure of SrRuO3 films.

Automated summary

Controlling defect densities in SrRuO3 films is crucial for investigating the relationship between its structural, electrical, and magnetic properties. By combining film growth, electrical transport, and magnetometry, we demonstrate the adsorption-controlled growth of phase-pure, epitaxial, and stoichiometric SrRuO3 films on SrTiO3 (001) substrates. It is found that the anomalous Hall curves arise from two distinct magnetic domains and a high residual resistivity ratio is achieved in a coherently strained SrRuO3 film.