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Article
Chemistry, Multidisciplinary
Heekyeong Park et al.
Summary: A large-area uniform, highly sensitive, and robust image sensor matrix based on nanoporous molybdenum disulfide (MoS2) phototransistors and indium-gallium-zinc oxide (IGZO) switching transistors is reported. The active-matrix image sensor achieves a high photoresponsivity of 5.2 x 10(4) A W-1 and successfully performs 4-inch-wafer-scale image mapping. This high-performance active-matrix image sensor is at the forefront of 2D material-based integrated circuitry and pixel image sensor applications.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Arindam Bala et al.
Summary: This study reports an in situ fabrication method for the two-dimensional material molybdenum diselenide (MoSe2), and successfully fabricates crossbar memristors with excellent performance. By controlling the diffusion of selenium on predeposited molybdenum, a layer of MoSe2 is produced, simplifying the fabrication process and reducing the number of required steps.
Article
Chemistry, Multidisciplinary
Dhananjay Mishra et al.
Summary: This study demonstrates the effectiveness of a new p-type copper iodide semiconductor in a flexible, low-voltage resistive random-access memory. The CuI RRAM devices, implemented through a room-temperature solid iodination process, show consistent On/Off ratio, excellent endurance, and long retention period. The study also showcases the use of blue light illumination for multi-level data storage and explores the thermal stability and key switching mechanism in CuI RRAM devices. Furthermore, the longevity of CuI devices is improved through PMMA encapsulation.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Jing-Yu Mao et al.
Summary: This article reports a damage-free Au/h-BN/Au memristor using a water-assisted metal transfer approach. The device shows improved performance and the ability to perform logic operations.
Article
Nanoscience & Nanotechnology
Yuqian Gu et al.
Summary: The research demonstrated successful synthesis of MoS2 and WS2 on sapphire wafers through a one-step sulfurization method, with the thin films transferred to SiO2/Si substrates. The fabricated MoS2 and WS2 memristors showed stable non-volatile switching and a satisfactory large on/off current ratio. Tuning the sulfurization parameters was found to be a simple and effective strategy to improve the performance of the memristors.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Physical
Arindam Bala et al.
Summary: In this study, a highly active and robust MoS2 catalyst with uniform triangular nanoholes on its basal plane was developed via nanoscale patterning. The exposure of Mo-terminated zigzag edges at numerous nanopores led to a significantly lower overpotential for the nanoporous MoS2-x compared to pristine MoS2. The stable catalytic performance of the nanoporous MoS2-x was also verified under continuous measurement for 16 hours. This study provides new insights into the nanoscale patterning and edge engineering of two-dimensional MoS2 for designing highly efficient and low-cost HER electrocatalysts.
JOURNAL OF PHYSICAL CHEMISTRY C
(2022)
Article
Chemistry, Multidisciplinary
Anamika Sen et al.
Summary: The technological improvement in detecting visible-to-NIR spectrum range using indium gallium zinc oxide (IGZO), an amorphous metal oxide semiconductor, without additional photoabsorber is achieved through engineered structural morphology. The presence of nanopores with edge functionalization enhances the density of substates near the band extrema, resulting in high photosensitivity and photoresponsivity. The wafer-scale phototransistor array demonstrates the sophisticated process of creating a nonporous morphology and exhibits effective sensing and reproducing of selectively illuminated pixels.
Article
Chemistry, Multidisciplinary
Arindam Bala et al.
Summary: This study utilizes plasma-enhanced chemical vapor deposition to grow large-area MoS2 on regular glass and fabricate transparent thin film transistors (TFTs) with good performance parameters. The stable and uniform photoresponse of transparent MoS2 TFTs is significant for the fabrication of transparent image sensors in the field of optoelectronics.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Physics, Applied
Dongqi Zheng et al.
Summary: Two-dimensional van der Waals ferroelectric semiconductors have been extensively studied due to their ferroelectric and semiconducting properties. In this research, mm-scale continuous films of In2Se3 with a thickness of around 3 nm were successfully synthesized, and asymmetric ferroelectric semiconductor junctions (a-FSJs) were fabricated. The a-FSJs exhibited high read current density and distinction ratio, making them promising for high-density memory integration. A qualitative model was proposed to explain the anomalous film-thickness-independent coercive voltage observed in the ultrathin a-FSJs.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
Muhammad Naqi et al.
Summary: This study demonstrates an artificial electronic synapse device based on a synthesized MoS2 memristor array that can emulate synaptic behavior in deep neural network learning. The proposed device exhibits excellent endurance and retention performance, as well as highly uniform memory performance. It shows close linear behavior in potentiation and depression and achieves high recognition accuracy in the emulation of an artificial neural network.
NPJ 2D MATERIALS AND APPLICATIONS
(2022)
Article
Engineering, Electrical & Electronic
Arindam Bala et al.
Summary: This study explores a class of resistive memory candidates - simple binary halides - and demonstrates the efficacy of copper halides, particularly copper iodide (CuI), in switching between high-and low-resistive states. The results show that CuI deposited on a flexible PET substrate using an innovative technique exhibits efficient resistive switching with a transparent and flexible PET/ITO/CuI/Ag device.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Mengwei Si et al.
Summary: In this study, a ferroelectric semiconductor junction with a metal/α-In2Se3/Si structure was proposed and experimentally demonstrated. The high-performance c-FSJ showed an on/off ratio > 10^4 at room temperature and > 10^3 at 140 degrees C, with retention > 10^4 s and endurance > 10^6 cycles. By introducing a metal/α-In2Se3/insulator/metal structure, the on/off ratio of the α-In2Se3 asymmetric FSJs can be further enhanced to >10^8.
Article
Chemistry, Multidisciplinary
Xuewen Wang et al.
Summary: Synaptic devices based on 2D-layered materials with artificially engineered grain boundaries have been developed, exhibiting responsiveness to various stimuli, low energy consumption, and plasticity characteristics. This provides an effective way to fabricate lateral synaptic devices for practical application development and sheds light on controllable electrical state switching for neuromorphic computing.
ADVANCED MATERIALS
(2021)
Article
Multidisciplinary Sciences
Seongin Hong et al.
Summary: Various large-area growth methods have been developed for two-dimensional transition metal dichalcogenides, but have not been used for synthesizing active pixel image sensors. An active pixel image sensor array with bilayer MoS2 film was successfully prepared and exhibited high photoresponsivity. The main mechanism for the high photoresponsivity of bilayer MoS2 phototransistors is attributed to a photo-gating effect by holes trapped at subgap states.
NATURE COMMUNICATIONS
(2021)
Article
Nanoscience & Nanotechnology
Healin Im et al.
Summary: Thiol-based functionalization of multilayer MoS2 is used to customize its electrical and optical performance, with 4-amino thiophenol (4ATP) and 4-nitro thiophenol (4NTP) being the two types of thiol-terminated organic molecules utilized. The functionalization significantly affects the current, carrier concentration, and photoresponsive characteristics of MoS2 transistors, with 4ATP-MoS2 showing enhanced photoresponsivity and 4NTP-MoS2 exhibiting faster photoswitching performances. Overall, thiol-based functionalization effectively customizes the electrical and optical characteristics of multilayer MoS2.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Chemistry, Multidisciplinary
Long Liu et al.
Summary: By fabricating a crossbar device using 2D HfSe2 and oxidizing the top layers into HfSexOy via oxygen plasma treatment，a MoS2 memristive device with excellent resistive switching performance is achieved，demonstrating low-power Boolean logic and energy-efficient in-memory computing applications.
Article
Automation & Control Systems
Yesheng Li et al.
Summary: Brain-inspired neuromorphic computing shows potential in overcoming the energy and speed limitations of traditional von Neumann computing. The use of memristor crossbar arrays is key in constructing complex artificial neural networks and emulating the hierarchical organization of the human brain. Recommendations for further optimization at device, circuit, and algorithm levels are provided for the hardware implementation of neuromorphic computing systems based on large-scale CBAs.
ADVANCED INTELLIGENT SYSTEMS
(2021)
Article
Engineering, Electrical & Electronic
Shaochuan Chen et al.
NATURE ELECTRONICS
(2020)
Review
Materials Science, Multidisciplinary
Wei Hu et al.
JOURNAL OF MATERIALS CHEMISTRY C
(2020)
Article
Nanoscience & Nanotechnology
Jonathan Ludwig et al.
Article
Materials Science, Multidisciplinary
Siqi Yin et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2019)
Article
Nanoscience & Nanotechnology
Stefan Petzold et al.
ADVANCED ELECTRONIC MATERIALS
(2019)
Article
Nanoscience & Nanotechnology
Xuewei Feng et al.
ADVANCED ELECTRONIC MATERIALS
(2019)
Article
Nanoscience & Nanotechnology
Shuang Pi et al.
NATURE NANOTECHNOLOGY
(2019)
Review
Engineering, Electrical & Electronic
Daniele Ielmini et al.
NATURE ELECTRONICS
(2018)
Article
Engineering, Electrical & Electronic
Miao Wang et al.
NATURE ELECTRONICS
(2018)
Article
Chemistry, Multidisciplinary
Quoc An Vu et al.
ADVANCED MATERIALS
(2017)
Article
Chemistry, Multidisciplinary
Haifeng Ling et al.
ADVANCED MATERIALS
(2017)
Article
Chemistry, Multidisciplinary
Chengbin Pan et al.
ADVANCED FUNCTIONAL MATERIALS
(2017)
Article
Chemistry, Multidisciplinary
Sajedeh Manzeli et al.
Article
Nanoscience & Nanotechnology
K. Golasa et al.
Article
Chemistry, Multidisciplinary
Hai Li et al.
Article
Chemistry, Multidisciplinary
Kazuki Nagashima et al.
Article
Physics, Applied
Yidong Xia et al.
APPLIED PHYSICS LETTERS
(2007)
