期刊
ACS NANO
卷 17, 期 14, 页码 13784-13791出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.3c03407
关键词
low temperature; transfer-free; flexible; large area; plasma-enhanced chemical vapor deposition(PECVD); MoS2
Transition-metal dichalcogenides (TMDs) in flexible technology provide scalability, integration, and low power consumption. However, the high process temperature of TMDs hinders their incorporation in large-area flexible platforms for data storage. Low-temperature growth of TMDs bridges this gap and simplifies the transferring process.
Transition-metal dichalcogenides(TMDs) in flexible technologycan offer large-area scalability and high-density integration witha low power consumption. However, incorporating large-area TMDs ina flexible platform is lacking in state-of-the-art data storage technologyowing to the high process temperature of TMDs. Low-temperature growthof TMDs can bridge mass production in flexible technology and reducethe complexity of the transferring process. Here, we introduce a crossbarmemory array enabled by low-temperature (250 & DEG;C) plasma-assistedchemical vapor deposited MoS2 directly grown on a flexiblesubstrate. The low-temperature sulfurization induces nanograins ofMoS(2) with multiple grain boundaries, allowing the pathfor charge particles, which leads to the formation of conducting filaments.The back-end-of-line compatible MoS2-based crossbar memristorsexhibit robust resistance switching (RS) behavior with a high on/offcurrent ratio of approximately & SIM;10(5), excellent endurance(>350 cycles), retention (>200000 s), and low operating voltage(& SIM;& PLUSMN;0.5V). Furthermore, the MoS2 synthesized at low temperatureon a flexible substrate facilitates RS characteristics demonstratedunder strain states and exhibits excellent RS performance. Thus, theuse of direct-grown MoS2 on a polyimide (PI) substratefor high-performance cross-bar memristors can transform emerging flexibleelectronics.
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