期刊
CHEMICAL COMMUNICATIONS
卷 51, 期 54, 页码 10823-10826出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5cc03111g
关键词
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资金
- National Basic Research Program (973-program) of China [2013CB632501]
- NSFC [11234012, 51121064, 11204333]
- Key Research Program of Chinese Academy of Sciences [KGZD-EW-T06]
- Department of Energy, Office of Science, Basic Energy Sciences, through the S3TEC Energy Frontier Research Centre
- U.S. Department of Energy [DE-FC26-04NT42278]
- GM
- National Science Foundation [1235535]
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [1235535] Funding Source: National Science Foundation
We report the design of novel filled CoSb3 skutterudite phases based on a combination of filling and Sb-substituted Ga/In defects. Ga/In doped skutterudite phases with Li-, Nd-, and Sm-fillings can be formed via this strategy, which can have relatively wider ranges of carrier concentration than other conventional filled skutterudite phases.
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