Improved Performance of Organic Light-Emitting Transistors Enabled by Polyurethane Gate Dielectric

Organic light-emitting transistors(OLETs) are multifunctionaloptoelectronic devices that combine in a single structure the advantagesof organic light-emitting diodes (OLEDs) and organic field-effecttransistors (OFETs). However, low charge mobility and high thresholdvoltage are critical hurdles to practical OLET implementation. Thiswork reports on the improvements obtained by using polyurethane filmsas a dielectric layer material in place of the standard poly(methylmethacrylate) (PMMA) in OLET devices. It was found that polyurethanedrastically reduces the number of traps in the device, thereby improvingelectrical and optoelectronic device parameters. In addition, a modelwas developed to rationalize an anomalous behavior at the pinch-offvoltage. Our findings represent a step forward to overcome the limitingfactors of OLETs that prevent their use in commercial electronicsby providing a simple route for low-bias device operation.

Automated summary

Organic light-emitting transistors (OLETs) combine the advantages of organic light-emitting diodes (OLEDs) and organic field-effect transistors (OFETs) but face challenges of low charge mobility and high threshold voltage. This study demonstrates that using polyurethane films as a dielectric layer material in OLET devices can significantly reduce traps and improve device parameters. The findings provide a simple solution for low-bias device operation and overcome the limiting factors of OLETs.