期刊
ACS APPLIED MATERIALS & INTERFACES
卷 15, 期 31, 页码 37649-37657出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.3c06695
关键词
Rare-earth oxides; solar-blind UV detectors; photovoltaic photodetector; Sm2O3; graphene
In this work, a p-Gr/i-Sm2O3/n-SiC heterojunction photovoltaic solar-blind UV sensor was constructed for the first time, overcoming the high resistivity and poor photoelectric response performance of rare-earth oxides. This detector exhibited outstanding performance with a responsivity of 19.8 mA/W and an open-circuit voltage of 0.68 V. The fabrication of this high-performance Sm2O3-based photovoltaic UV detector has broadened the application fields of rare-earth oxide semiconductors, making it valuable for future research in relevant fields.
Rare-earth oxide Sm2O3 is theoreticallyexpectedto be used in the preparation of ultraviolet (UV) detectors with lowdark currents and high radiation resistance due to its characteristicsof a wide bandgap, a high dielectric constant, and high chemical stability.However, certain features that rare-earth oxides possess, such ashigh resistivity and weak photoelectric response currents, have hinderedrelevant research on these kinds of materials in the field of UV detection.In this work, a p-Gr/i-Sm2O3/n-SiC heterojunction photovoltaicsolar-blind UV sensor was constructed for the first time. Becauseof the high mobility of graphene (Gr) and the contribution of doublebuilt-in electric fields in the heterojunction, the collection efficiencyof photogenerated carriers has been greatly improved, with the typicalshortcomings of high resistivity and poor photoelectric response performanceof rare-earth oxides having been overcome. This detector has exhibitedoutstanding performance at 0 V, including a responsivity of 19.8 mA/Wand an open-circuit voltage of 0.68 V. Additionally, this detectorhas a detectivity as high as 1.2 x 10(11) jones, whichis at the front position of most ultraviolet detectors. The fabricationof this high-performance Sm2O3-based photovoltaicUV detector has broadened the application fields of rare-earth oxidesemiconductors. Therefore, this project has important value for futureresearch in relevant fields.
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