Self-Powered Infrared Photodetectors with Ultra-High Speed and Detectivity Based on Amorphous Cu-Based MOF Films

Amorphous metal-organic frameworks (aMOFs) startto challengetheir crystalline equivalents due to their unique advantages, likelack of grain boundaries, isotropy, flexibility, numerous defects-inducedactive sites, etc. However, aMOFs are typically synthesized underrigorous conditions, and their properties and applications need tobe further explored. In this work, highly transparent p-type amorphousCu-HHTP films consisting of Cu2+ and 2,3,6,7,10,11-hexahydroxytriphenylene(HHTP) were synthesized using a simple electrostatic spinning methodand identified as p-a-Cu-HHTP. Besides, a p-a-Cu-HHTP/n-Si infraredphotodetector (PD) operating on a self-powered basis with ultra-highspeed (response time of 40 & mu;s) and detectivity (1.2 x 10(12) Jones) has been developed, with a response time and detectivitythat are record values for a MOF-based photodetector. In particular,the p-a-Cu-HHTP/n-Si PD can withstand high temperatures up to 180 & DEG;C without property change. Moreover, a flexible metal-semiconductor-metalphotodetector based on p-a-Cu-HHTP is constructed, which shows excellentmechanical stability and photoresponse that remain unchanged afterbending 120 times, implying its suitability for wearable optoelectronics.The new method to fabricate aMOFs, the unique p-a-Cu-HHTP, and itsPDs initiated in this work opens up a new avenue in organic-inorganichybrid optoelectronics.

Automated summary

In this study, highly transparent p-type amorphous Cu-HHTP films were synthesized using electrostatic spinning method and applied as materials for photodetectors. These amorphous films exhibited ultra-high response speed and sensitivity, and maintained stable performance even at high temperatures. Furthermore, a flexible metal-semiconductor-metal photodetector based on p-a-Cu-HHTP was developed, showing excellent mechanical stability and photoresponse, making it suitable for wearable optoelectronics.