Scalable High-Mobility Graphene/hBN Heterostructures

Graphene-hexagonalboron nitride (hBN) scalable heterostructuresare pivotal for the development of graphene-based high-tech applications.In this work, we demonstrate the realization of high-quality graphene-hBNheterostructures entirely obtained with scalable approaches. hBN continuousfilms were grown via ion beam-assisted physical vapor deposition directlyon commercially available SiO2/Si and used as receivingsubstrates for graphene single-crystal matrixes grown by chemicalvapor deposition on copper. The structural, chemical, and electronicproperties of the heterostructure were investigated by atomic forcemicroscopy, Raman spectroscopy, and electrical transport measurements.We demonstrate graphene carrier mobilities exceeding 10,000 cm(2)/Vs in ambient conditions, 30% higher than those directlymeasured on SiO2/Si. We prove the scalability of our approachby measuring more than 100 transfer length method devices over a centimeterscale, which present an average carrier mobility of 7500 & PLUSMN; 850cm(2)/Vs. The reported high-quality all-scalable heterostructuresare of relevance for the development of graphene-based high-performingelectronic and optoelectronic applications.

Automated summary

In this work, high-quality graphene-hexagonal boron nitride (hBN) heterostructures were successfully obtained using scalable approaches. Continuous hBN films were grown on commercially available SiO2/Si and used as receiving substrates for graphene single-crystal matrixes. The structural, chemical, and electronic properties of the heterostructure were investigated, and graphene carrier mobilities exceeding 10,000 cm(2)/Vs were achieved in ambient conditions.