Enhanced Photovoltaic Effect in n-3C-SiC/p-Si Heterostructure Using a Temperature Gradient for Microsensors

The development of fifth-generation (5G) communicationsand theInternet of Things (IoT) has created a need for high-performance sensingnetworks and sensors. Improving the sensitivity and reducing the energyconsumption of these sensors can improve the performance of the sensingnetwork and conserve energy. This paper reports a large enhancementof the photovoltaic effect in a 3C-SiC/Si heterostructure and thetunability of the photovoltage under the impact of a temperature gradient,which has the potential to increase the sensitivity and reduce theenergy consumption of microsensors. To start with, cubic silicon carbide(3C-SiC) was grown on a silicon wafer, and a micro-3C-SiC/Si heterostructuredevice was then fabricated using standard photolithography. The resultrevealed that the sensor could either capture light energy, transformit into electrical energy for self-power purposes, or detect lightwith intensities of 1.6 and 4 mW/cm(2). Under the impactof the temperature gradient induced by conduction heat transfer froma heater, the measured photovoltage was improved. This thermo-phototroniccoupling enhanced the photovoltage up to 51% at a temperature gradientof 8.73 K and light intensity of 4 mW/cm(2). Additionally,the enhancement can be tuned by controlling the direction of the temperaturegradient and the temperature difference. These findings indicate thepromise of the temperature gradient in SiC/Si heterostructures fordeveloping high-performance temperature sensors and self-powered photodetectors.

Automated summary

This paper reports a significant enhancement of the photovoltaic effect in a 3C-SiC/Si heterostructure under the impact of a temperature gradient. The enhanced photovoltage can improve the sensitivity and reduce the energy consumption of microsensors.