期刊
ACS APPLIED MATERIALS & INTERFACES
卷 15, 期 40, 页码 47359-47367出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsami.3c09027
关键词
transition metal dichalcogenides(TMDCs); monolayerMoS(2); metal-organic chemical vapor deposition(MOCVD); photoluminescence (PL); defects
This study introduces a new method for synthesizing large-area, high-quality two-dimensional transition metal dichalcogenides, such as MoS2. The method improves the performance of photodetectors and reduces sulfur vacancy defects in the film, which significantly affects material quality.
Advancements in the synthesis of large-area, high-quality two-dimensional transition metal dichalcogenides such as MoS2 play a crucial role in the development of future electronic and optoelectronic devices. The presence of defects formed by sulfur vacancies in MoS2 results in low photoluminescence emission and imparts high n-type doping behavior, thus substantially affecting material quality. Herein, we report a new method in which single-phase (liquid) precursors are used for the metal-organic chemical vapor deposition (MOCVD) growth of a MoS2 film. Furthermore, we fabricated a high-performance photodetector (PD) and achieved improved photoresponsivity and faster photoresponse in the spectral range 405-637 nm compared to those of PDs fabricated by the conventional MOCVD method. In addition, the fabricated MoS(2)thin film showed a threshold voltage shift in the positive gate bias direction owing to the reduced number of S vacancy defects in the MoS2 lattice. Thus, our method significantly improved the synthesis of monolayer MoS2 and can expand the application scope of high-quality, atomically thin materials in large-scale electronic and optoelectronic devices.
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