Liquid Metal Interface for Two-Precursor Autogenous Deposition of Metal Telluride-Tellurium Networks

Liquid metal-electrolyte can offer electrochemically reducing interfaces for the self-deposition of low-dimensional nanomaterials. We show that implementing such interfaces from multiprecursors is a promising pathway for achieving nanostructured films with combinatory properties and functionalities. Here, we explored the liquid metal-driven interfacial growth of metal tellurides using eutectic gallium-indium (EGaIn) as the liquid metal and the cation pairs Ag+-HTeO2+ and Cu2+-HTeO2+ as the precursors. At the EGaIn-electrolyte interface, the precursors were reduced and self-deposited autogenously to form interconnected nanoparticle networks. The deposited materials consisted of metal telluride and tellurium with their relative abundance depending on the metal ion type (Ag+ and Cu2+) and the metal-to-tellurium ion ratios. When used as electrode modifiers, the synthesized materials increased the electroactive surface area of unmodified electrodes by over 10 times and demonstrated remarkable activity for model electrochemical reactions, including HexRu(III) responses and dopamine sensing. Our work reveals the promising potential of the liquid metal-templated deposition method for synthesizing complex material systems for electrochemical applications.

Automated summary

Liquid metal-electrolyte can be used for self-deposition of low-dimensional nanomaterials. The liquid metal-driven interfacial growth of metal tellurides was explored using eutectic gallium-indium (EGaIn) as the liquid metal and specific cation pairs as precursors. The deposited materials consisted of metal telluride and tellurium, and their properties depended on the metal ion type and the metal-to-tellurium ion ratios. The synthesized materials showed promising potential as electrode modifiers, increasing the electroactive surface area of unmodified electrodes and demonstrating remarkable activity for electrochemical reactions.