Enhanced Mobility in Suspended Chemical Vapor-Deposited Graphene Field-Effect Devices in Ambient Conditions

High-field-effect mobility and the two-dimensional natureof graphenefilms make it an interesting material for developing sensing applicationswith high sensitivity and low power consumption. The chemical vapordeposition process allows for producing high-quality graphene filmsin a scalable manner. Considering the significant impact of the underlyingsubstrate on the graphene device performance, methods to enhance thefield-effect mobility are highly desired. This work demonstrates asimplified fabrication process to develop suspended, two-terminalchemical vapor deposition (CVD) graphene devices with enhanced field-effectmobility operating at room temperature. Enhanced hole field-effectmobility of up to & SIM;4.8 x 10(4) cm(2)/Vs and average hole mobility >1 x 10(4) cm(2)/Vs across all of the devices is demonstrated. A gradual increasein the width of the graphene device resulted in the increase of thefull width at half-maximum (FWHM) of field-effect characteristicsand a decrease in the field-effect mobility. Our work presents a simplifiedfabrication approach to realize high-mobility suspended CVD graphenedevices, beneficial for developing CVD graphene-related applications.

Automated summary

The high field-effect mobility and two-dimensional nature of graphene films make it a promising material for developing sensitive sensors with low power consumption. The chemical vapor deposition process allows scalable production of high-quality graphene films. This study presents a simplified fabrication process to develop suspended chemical vapor deposition graphene devices with enhanced field-effect mobility operating at room temperature.