4.8 Article

Probing Carrier Dynamics in Large-Scale MBE-Grown PtSe2 Films by Terahertz Spectroscopy

期刊

ACS APPLIED MATERIALS & INTERFACES
卷 15, 期 44, 页码 51319-51329

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsami.3c09792

关键词

THz-TDS spectroscopy; carrier dynamics; large-scaleTMD films; phase transitions; ultrafast light-matterinteractions; molecular beam epitaxy

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In this study, the electronic properties and light-induced carrier transport of large-scale PtSe2 films were investigated using terahertz spectroscopy techniques. The results demonstrate that PtSe2 films have a tunable electronic structure and high carrier mobility, and the terahertz methods provide information about the spatial and temporal properties of the films.
Atomically thin platinum diselenide (PtSe2) films are promising for applications in the fields of electronics, spintronics, and photodetectors owing to their tunable electronic structure and high carrier mobility. Using terahertz (THz) spectroscopy techniques, we investigated the layer-dependent semiconducting-to-metallic phase transition and associated intrinsic carrier dynamics in large-scale PtSe2 films grown by molecular beam epitaxy. The uniformity of large-scale PtSe2 films was characterized by spatially and frequency-resolved THz-based sheet conductivity mapping. Furthermore, we use an optical-pump-THz-probe technique to study the transport dynamics of photoexcited carriers and explore light-induced intergrain carrier transport in PtSe2 films. We demonstrate large-scale THz-based mapping of the electrical properties of transition metal dichalcogenide films and show that the two noncontact THz-based approaches provide insight in the spatial and temporal properties of PtSe2 films.

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