Room-Temperature and Tunable Tunneling Magnetoresistance in Fe3GaTe2-Based 2D van der Waals Heterojunctions

Magnetic tunnel junctions (MTJs) based on van der Waals(vdW) heterostructureswith sharp and clean interfaces on the atomic scale are essentialfor the application of next-generation spintronics. However, the lackof room-temperature intrinsic ferromagnetic crystals with perpendicularmagnetic anisotropy has greatly hindered the development of verticalMTJs. The discovery of room-temperature intrinsic ferromagnetic two-dimensional(2D) crystal Fe3GaTe2 has solved the problemand greatly facilitated the realization of practical spintronic devices.Here, we demonstrate a room-temperature MTJ based on a Fe3GaTe2/WS2/Fe3GaTe2 heterostructurefor the first time. The tunneling magnetoresistance (TMR) ratio isup to 213% with a high spin polarization of 72% at 10 K, the highestever reported in Fe3GaTe2-based MTJs up to now.A tunneling spin-valve signal robustly persists at room temperature(300 K) with a bias current down to 10 nA. Moreover, the spin polarizationcan be modulated by bias current and the TMR shows a sign reversalat a large bias current. Our work sheds light on the potential applicationof low-energy consumption in all-2D vdW spintronics and offers alternativeroutes for the electronic control of spintronic devices.

Automated summary

This study demonstrates a room-temperature magnetic tunnel junction (MTJ) based on a Fe3GaTe2/WS2/Fe3GaTe2 heterostructure, which exhibits a tunneling magnetoresistance (TMR) ratio of up to 213% and a high spin polarization of 72% at 10 K, the highest reported in Fe3GaTe2-based MTJs so far. The MTJ also maintains a robust tunneling spin-valve signal at room temperature (300 K) with low bias currents, offers potential for low-energy consumption in all-2D vdW spintronics and provides alternative routes for electronic control of spintronic devices.