One-Stage Process of Reduction, Fluorination, and Doping with Nitrogen of Graphene Oxide Films

The possibility of chemical modification of a graphene oxide film deposited on a Si/SiO2 substrate during a one-stage hydrothermal process in the presence of fluorine ions and reducing agents, such as ascorbic acid or hydrazine, is shown. The proposed technique makes it possible to obtain reduced fluorinated graphene nitride oxide (RGOFN) in the form of a thin film with a controlled composition of functional groups by changing the type and concentration of the reducing agent and then transferring the obtained films to any substrate. XPS and IR spectroscopy of the obtained films revealed controlled changes in the structure and composition of graphene oxide associated with the removal of oxygen groups and the incorporation of fluorine ions as well as the reduction of conjugated double bonds and the controlled incorporation of nitrogen into thin RGOFN films. The current-voltage characteristics of the fabricated RGOFN structures showed that their electrical properties are well controlled by doping with nitrogen during the proposed one-stage process.

Automated summary

This study demonstrates the possibility of chemically modifying a graphene oxide film deposited on a Si/SiO2 substrate during a one-stage hydrothermal process by using fluorine ions and reducing agents. The modified graphene oxide film, known as reduced fluorinated graphene nitride oxide (RGOFN), can be obtained in the form of a thin film with a controlled composition of functional groups by adjusting the type and concentration of the reducing agent. XPS and IR spectroscopy analysis reveals controlled changes in the structure and composition of the graphene oxide film, including the removal of oxygen groups, incorporation of fluorine ions, reduction of conjugated double bonds, and controlled incorporation of nitrogen.