Ionic Liquid Crystal Thin Film as Switching Layer in Nonvolatile Resistive Memory

In this study, we propose the use of an ionic liquid crystal (ILC) as a new resistive switching layer in nonvolatile resistive random-access memory (ReRAM) devices. The high-quality vacuum-deposited ILC films of 1-hexadecyl-3-methylimidazolium hexafluorophosphate ([C(16)mim][PF6]) enabled to demonstrate the first operation of ReRAM devices with a low set voltage of similar to 1 V and stable switching behavior for up to similar to 44 cycles. The key to the successful operation is that the ILC layer is in the liquid crystal phase (smectic A), where the electric double layers formed at the electrode-ILC interfaces play a significant role. The results of basic electrical properties and I-V curve fittings suggested the following operation principle: the formation and rupture of charge-composed filaments within the ILC film, where the current conduction is primarily governed by the trap charge limited current (TCLC) mechanism. These achievements will pave the way for advanced studies of ILC-based electronic devices.

Automated summary

This study proposes the use of an ionic liquid crystal as a resistive switching layer in nonvolatile ReRAM devices, achieving low set voltage and stable switching behavior. The successful operation is attributed to the liquid crystal phase and the electric double layers formed at the electrode-ILC interfaces.