Temperature dependent black phosphorus transistor and memory

We studied the temperature dependent transport properties and memory behaviour of ultrathin black phosphorus field-effect transistors. The devices show electrical conductance and field-effect mobility that decreases with the rising temperature. The field effect mobility, which depends also on the gate voltage sweep range, is 283 cm(2)V(-1)s(-1) at 150 K and reduces to 33 cm(2)V(-1)s(-1) at 340 K, when the voltage gate sweep range is +/- 50 V. The transfer characteristics show a hysteresis width that increases with the temperature and is exploited to enable non-volatile memories with a wider programming window at higher temperatures.

Automated summary

We investigated the temperature dependence of transport properties and memory behavior in ultrathin black phosphorus field-effect transistors. The devices displayed a decrease in electrical conductance and field-effect mobility as the temperature increased. The field-effect mobility was 283 cm(2)V(-1)s(-1) at 150 K and reduced to 33 cm(2)V(-1)s(-1) at 340 K when the voltage gate sweep range was +/- 50 V. The transfer characteristics exhibited an increasing hysteresis width with temperature, which was utilized to create non-volatile memories with a wider programming window at higher temperatures.