期刊
IEEE SENSORS LETTERS
卷 7, 期 4, 页码 -出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LSENS.2023.3262736
关键词
Sensor systems; on-chip inductor; energy harvesting; internet of things (IoT); power regulation; sensor applications
This letter examines the performance of on-silicon inductor coils with integrated buck dc-dc converters made using a 180 nm CMOS process. A parallel shunting structure with different metal layers was chosen for its lower resistance and higher inductance in low-power IoT scenarios. Simulation results demonstrate stable values of more than 230 nH for the fabricated inductors within the expected frequency range. The proposed dc-dc converter achieves an efficiency of 69.1% at 30 MHz for a 12.9 mA load, operating at voltage levels of 2.4 to 1.2 V. Our approach enables high-inductance integration without the need for costly postprocessing techniques, expanding the application of power inductor and dc-dc converter integration.
This letter looks into the performance of the on-silicon inductor coil with integrated buck dc-dc converters, made using a 180 nm bulk complementary metal-oxide semiconductor (CMOS) process. A parallel shunting structure with different metal layers was selected for its lower resistance and higher inductance at the specific low-power internet of things (IoT) scenario. The simulation results show that the fabricated inductors have stable values of more than 230 nH over the expected 1-50 MHz range. The proposed dc-dc converter's efficiency (2.4 to 1.2 V) reaches a maximum of 69.1% at 30 MHz for a 12.9 mA load. Our inductor coil achieved the highest inductance via the most straightforward CMOS technique without the additional expensive postprocessing technology. It pushes the boundary of power inductor integration with a dc-dc converter to a 30 MHz and 10 mW domain, thus exhibiting excellent potential for managing electricity in energy harvesting scenarios.
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