期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 42, 期 -, 页码 378-382出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2015.11.010
关键词
Ni/GaP Schottky contacts; Capacitance-voltage; Conductance-voltage; Dielectric properties; Metal-semiconductor interface
类别
资金
- Department of Science and Technology, India [SB/FTP/PS-072/2013]
The dielectric properties of Ni/n-Gap Schottky diode were investigated in the temperature range 140-300 K by capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements. The effect of temperature on series resistance (R-s) and interface state density (N-ss) were investigated. The dependency of dielectric constant (epsilon'), dielectric loss (epsilon), loss tangent (tan delta), ac conductivity (sigma(ac)), teal (M') and imaginary (M) parts of the electric modulus over temperature were evaluated and analyzed at 1 MHz frequency. The temperature dependent characteristics of epsilon' and epsilon reveal the contribution of various polarization effects, which increases with temperature. The Arrhenius plot of sigma(ac) shows two activation energies revealing the presence of two distinct trap states in the chosen temperature range. Moreover, the capacitance-frequency (C-f) measurement over 1 kHz to 1 MHz was carried out to study the effect of localized interface states. (C) 2015 Elsevier Ltd. All rights reserved.
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