期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 48, 期 -, 页码 33-38出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2016.03.003
关键词
CISSe; Oxides; Semiconductors; Thin films; Crystal growth
类别
资金
- National Natural Science Foundation of China [51502037]
- Natural Science Foundation of Fujian Province, China [2015J05096]
- National Key Project for Basic Research of China [2011CBA00200]
Oxide nanoparticles-based process is one of the successful approaches to prepare CuIn1-xGaxSe2 and CuInSe2, which has achieved high power conversion efficiencies. In order to transform the oxides into selenide, the oxide precursors were annealed with solid Se which was used as a source of Se vapor rather than highly toxic and explosive H2Se and H-2 gas. However, the In2O3 phase frequently remains in the final films after selenization because of the high stability of In2O3 and the poor activity of Se during selenization. So, in order to eliminate the impurity phase of In2O3 and improve the morphology of the final thin films, the oxide precursors were sequentially sulfurized and selenized. The CuIn(S, Se)(2) (CISSe) thin films which have pure phase, improved crystallinity, larger grain size and optimized band gap were obtained in this work. (C) 2016 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据