期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 48, 期 -, 页码 23-26出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2016.02.024
关键词
Thin film transistors; InGaZnO; Silver electrodes; Sputtering
类别
资金
- National Natural Science Foundation of China [61136004, 61474075]
The amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with sputtered silver source/drain (S/D) and gate electrodes were investigated and developed. The sputtered single-film Ag was confirmed to be unfit for the electrodes of a-IGZO TFTs because of its bad contact with a-IGZO and atom diffusion into insulators. Accordingly the sputtered Mo films were proposed to serve as the capping layers, indicating that the 20-nm-thick Mo could effectively form ohmic contact with the a-IGZO, prevent the Ag diffusion into the SiOx, and make good adhesion to the glass substrates. The devices with multi-layer S/D and gate electrodes (Mo/Ag/Mo) were successfully fabricated, exhibiting the reasonably good performance and thus proving the application of the sputtered silver electrodes into a-IGZO TFTs was possible. (C) 2016 Elsevier Ltd. All rights reserved.
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