期刊
CHEMICAL COMMUNICATIONS
卷 51, 期 63, 页码 12589-12592出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c5cc04286k
关键词
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资金
- Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan [26000008, 26410074, 26810038, 15K17832]
- World Premier International Research Centre Initiative (WPI), Japan
- Grants-in-Aid for Scientific Research [26000008, 25288106, 26810038, 15K17832] Funding Source: KAKEN
We report an acid-stable Si oxide-doped Ir oxide film (IrSi oxide film), made by metal organic chemical vapour deposition (MOCVD) of an Ir-V complex for electrochemical water-oxidation. This is a successful improvement of catalytic ability and stability depending upon the pH of Ir oxide by doping of Si oxide. The turnover frequency (TOF) of the electrochemical water-oxidation by the IrSi oxide film is the highest of any Si oxide-doped Ir oxide materials and higher even than that of Ir oxide in acidic media.
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