期刊
MATERIALS SCIENCE AND TECHNOLOGY
卷 32, 期 5, 页码 418-433出版社
TAYLOR & FRANCIS LTD
DOI: 10.1179/1743284715Y.0000000103
关键词
-
资金
- EPSRC Cambridge/UCL Photonics CDT
- ERC MaCONS grant
III-Nitrides are materials that have revolutionised the lighting industry allowing for the development of high brightness and efficiency white light emitting diodes (LEDs), enabling cost and energy savings at an unprecedented scale. However, there remain several obstacles to the further enhancement of the efficiency of LEDs, particularly for emission at longer wavelengths. The existence of polarisation fields as an inherent property of wurtzite III-nitride materials severely hampers LED performance. The origin of these fields due to the deviation from an ideal tetrahedral bonding structure and their relation to strain has been addressed in this review. The effect of the polarisation fields on the band structure of heterostructure quantum wells, known as the quantum confined stark effect, and its implications for the efficiency and spectral stability of LEDs have also been reviewed. Finally, the effectiveness and viability of several proposed methods of mitigating the harmful effects of the polarisation fields, such as the growth of III-nitrides on alternative planes, doping, strain engineering and growth of cubic GaN, have been addressed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据