4.3 Article

Surface chemistry of Ti6Al4V components fabricated using selective laser melting for biomedical applications

出版社

ELSEVIER
DOI: 10.1016/j.msec.2016.05.054

关键词

Additive manufacturing; 3D printing; Selective laser melting (SLM); Surface chemistry; Ti6Al4V; Cytotoxicity

资金

  1. Engineering and Physical Sciences Research Council (EPSRC
  2. UK) [EP/I033335/2]
  3. Medical Research Council (MRC)-EPSRC Centre for Doctoral Training (CDT) in Regenerative Medicine [EP/L015072/1]
  4. EPSRC [EP/I033335/1, EP/I033335/2] Funding Source: UKRI
  5. Engineering and Physical Sciences Research Council [1380060, EP/I033335/1, EP/I033335/2] Funding Source: researchfish

向作者/读者索取更多资源

Selective laser melting (SLM) has previously been shown to be a viable method for fabricating biomedical implants; however, the surface chemistry of SLM fabricated parts is poorly understood. In this study, X-ray photoelectron spectroscopy (XPS) was used to determine the surface chemistries of (a) SLM as-fabricated (SLM-AF) Ti6Al4V and (b) SLM fabricated and mechanically polished (SLM-MP) Ti6Al4V samples and compared with (c) traditionally manufactured (forged) and mechanically polished Ti6Al4V samples. The SLM-AF surface was observed to be porous with an average surface roughness (Ra) of 17.6 +/- 3.7 mu m. The surface chemistry of the SLM-AF was significantly different to the FGD-MP surface with respect to elemental distribution and their existence on the outermost surface. Sintered particles on the SLM-AF surface were observed to affect depth profiling of the sample due to a shadowing effect during argon ion sputtering. Surface heterogeneity was observed for all three surfaces; however, vanadium was witnessed only on the mechanically polished (SLM-MP and FGD-MP) surfaces. The direct and indirect 3T3 cell cytotoxicity studies revealed that the cells were viable on the SLM fabricated Ti6Al4V parts. The varied surface chemistry of the SLM-AF and SLM-MP did not influence the cell behaviour. (C) 2016 The Authors. Published by Elsevier B.V.

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