4.6 Article

Photoelectrochemical properties of CdSe quantum dot sensitized p-type flower-like NiO solar cells with different deposition layer

期刊

MATERIALS RESEARCH BULLETIN
卷 84, 期 -, 页码 212-217

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2016.08.013

关键词

Oxides; Optical materials; Thin films; Chemical synthesis; Electrochemical measurments; Electrochemical properties

资金

  1. National Natural Science Foundation of China (NSFC) [21201053, 51077035, 21303039]
  2. Fund in Hebei Province Natural Science [F2014201078, A2015201050, B2015205163, B2013205171]
  3. Youth Fund in Hebei Province Department of Education China [QN2014057]
  4. Fund in Hebei Province Applied Basic Research Project [14964306D]
  5. Support Program for Hundred Excellent Innovation Talents from the Universities of Hebei Province [BR2-220]
  6. Key Project in Hebei Province Department of Education [ZD2016055, ZD2015044]
  7. Outstanding Youth Fund of Hebei University [2015JQ02]
  8. Postgraduate's Innovation Fund Project of Hebei Province [S2016023]
  9. College Students' Innovative Entrepreneurial Training Program in Hebei Province [201610075066]
  10. Second Batch of Young Talent of Hebei Province
  11. Science Foundation of Hebei Normal University [L2016J02]

向作者/读者索取更多资源

Flower-like NiO nanoparticles. was successfully synthetized by homogeneous precipitation. A novelty modified (CH3)(4)N)(2)S/((CH3)(4)N)(2)Sn electrolyte was introduced in solar cell successfully and NiS was used as the counter electrode. Moreover, CdSe sensitized p-type NiO was synthesized by chemical bath deposition (CBD) in a precursor solution to ensure the nanosized flower-like NiO films obtain a better uniformity and high penetration. Meanwhile, a series of parallel experiment were designed to investigate the effect of different CdSe deposition layers on the photoelectric characteristic of the cell. The result showed that when the film was eight layers, the maximum efficiency of 1.06% had been achieved, with a significantly open circuit voltage (V-oc) of 0.755 V, a fill factor (ff) of 0.27% and a short circuit current density (J(sc)) of 5.21 mA cm(-2). (C) 2016 Elsevier Ltd. All rights reserved.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据