Preparation of few-layer graphene on on-axis 4H-SiC (000(1)over-bar) substrates using a modified SiC-stacked method

Large area graphene films have been successfully grown on on-axis 4H-SiC (000 (1) over bar) by adding a modified SiC cap. Both the morphology and crystalline quality of modified SiC-stacked epitaxial graphene were investigated. The results reveal that domains of modified SiC-stacked epitaxial graphene are much larger, while the corresponding terraces are much more orderly than those formed by traditional face-to-face method (a SiC wafer used as the cap). It is also shown that the process of modified SiC-stacked thermal decomposition is more controllable and the modified SiC-stacked epitaxial graphene is of high quality. This could provide a method to fabricate wafer-sized high-quality graphene films. (C) 2015 Elsevier B.V. All rights reserved.