From defect to effect: controlling electronic transport in chevron graphene nanoribbons

While bottom-up synthesis allows for precise control over the properties of graphene nanoribbons (GNRs), the use of certain precursor molecules can result in edge defects, such as missing benzene rings that resemble a 'bite'. We investigate the adverse effect of the 'bite' defects on the electronic transport properties in three chevron-type GNRs and discover that the extent of scattering is governed by the different defect positions. Applying the concepts learned in single GNRs, we engineer defects in two nanostructures to construct prototypical components for nanoelectronics. First, we design a switch, consisting of three laterally fused fluorenyl-chevron GNRs, and place a pair of 'bite' defects to effectively allow the switching between four binary states corresponding to distinct current pathways. Second, we show that conscientious placement of a 'bite' defect pair can increase conductance between two leads in a triple chevron GNR junction. Overall, we outline how the incorporation of 'bite' defects affects transport properties in chevron-type nanostructures and provide a guide on how to design nanoelectronic components.

Automated summary

While bottom-up synthesis offers precise control over the properties of graphene nanoribbons (GNRs), certain precursor molecules can lead to edge defects called 'bite' defects. The adverse effect of these defects on electronic transport properties in chevron-type GNRs is investigated. The study shows how the defects can be engineered to construct nanoelectronic components and improve conductance in nanostructures.