期刊
MATERIALS LETTERS
卷 164, 期 -, 页码 198-201出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.matlet.2015.10.154
关键词
ZnS; Semiconductors; Photoluminescence; Microstructure; Optical materials
资金
- Khon Kaen University
The plate-like ZnS microstucture has been prepared at low temperature in high-yield via catalyst-free chemical precipitation method without using any surfactant, organic solvent or capping agent. The method is a highly reproducible route which could be applicable for preparation of other semiconductors. The as-synthesized ZnS belongs to cubic structure. The formation of plate-like microstructure, with the grain size of about 80-200 nm (from SEM), is possibly due to assembling of many crytallites (crystallite size of 2.7-3.4 nm, from XRD). FT-IR spectrum indicates stability of ZnS without oxidizing to ZnO during the preparation process. The blue emission in photoluminescence (PL) spectrum is quite broad over the range of 420-500 nm. This may originate from the radiative combination due to surface defect states in the ZnS microstructure. (C) 2015 Elsevier B.V. All rights reserved.
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