期刊
PROCEEDINGS OF THE INDIAN NATIONAL SCIENCE ACADEMY
卷 89, 期 2, 页码 254-266出版社
INDIAN NAT SCI ACAD
DOI: 10.1007/s43538-023-00161-1
关键词
Carbon nanotubes; Vertically aligned CNTs; Electric field; Energy absorption; Mechanical behavior
In this summary, we examine the mechanical response of vertically aligned carbon nanotubes forest (CNTF) structures under an applied electric field. Compression tests reveal that the presence of an electric field enhances the overall strength and energy absorption capacity of CNTF structures. However, the improvement in energy absorption is reduced at higher strain rates. Additionally, applying an electric field improves the creep resistance of CNTF structures. These findings hold promise for the development of advanced nano- and micro-electro-mechanical devices and sensors.
Here, we summarize various reports on the mechanical response of vertically aligned carbon nanotubes forest (CNTF) structures under an applied electric field. Quasi-static compression tests on CNTF structures show a dramatic strengthening by application of the electric field both in low-strain (linear) and high strain (nonlinear) regimes. The CNTF structures also show a finite hysteresis, i.e., energy dissipation, in stress-strain behavior during a loading-unloading cycle. Tests demonstrate that the application of an electric field can tailor the energy absorption capacity of CNTF structures. In practice, the energy absorption capacity of CNTF structures increases by several folds when the loading and unloading (under quasi-static strain rates) are performed in the presence and the absence of the electric field, respectively. However, the improvement in the energy absorption capacity decreases drastically at higher strain rates. Additionally, applying an electric field improves the creep resistance of the CNTF structures. Overall, the summarized studies show promising electro-mechanical properties of CNTF structures which are helpful in developing the next generation of nano-and micro-electro-mechanical devices and sensors.
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