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Article
Computer Science, Information Systems
Peipei Ma et al.
Summary: Heavy doped n-type beta-Ga2O3 (HD-Ga2O3) was obtained by Si ion implantation on unintentionally doped beta-Ga2O3 single crystal substrates. The ion-implanted layer showed high lattice quality after high-temperature annealing, and the minimum specific contact resistance was reduced by the formation of titanium oxide at the Ti/Ga2O3 interface. Lateral beta-Ga2O3 diodes prepared using HD-Ga2O3 exhibited high forward current density and low specific on-resistance.
TSINGHUA SCIENCE AND TECHNOLOGY
(2023)
Article
Engineering, Electrical & Electronic
Qiming He et al.
Summary: This work demonstrates vertical beta-Ga2O3 Schottky barrier diodes (SBDs) breaking through the power figure of merit of 1 GW/cm(2) without edge termination. The unreliable surface on the top of the drift region, which naturally formed in air, was removed by inductively coupled plasma etching. The repaired surface was exposed to ambient air for less than 10 minutes during the entire preparation process. Compared with the excessive air exposure samples, the leakage current was well suppressed for the Ni/beta-Ga2O3 SBDs fabricated on a clean surface. Moreover, the blocking voltage reaches a maximum value of 1720 V, and the forward/reverse characteristics of the diodes on the same wafer show good uniformity. These results pave the way for further improving the performance of beta-Ga2O3 devices and verify the potential of beta-Ga2O3 SBDs for power applications.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Physics, Applied
Wenbo Tang et al.
Summary: This Letter demonstrates the growth of high-quality homoepitaxial (001) beta-Ga2O3 films via metalorganic chemical vapor deposition (MOCVD) with the assistance of an in situ indium surfactant. The incorporation of indium suppresses surface desorption and promotes a smooth surface morphology. This work provides a systematic investigation on the growth of high-quality beta-Ga2O3 homoepitaxial films, which is critical for the development of future beta-Ga2O3 electronic devices.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Applied
Sayleap Sdoeung et al.
Summary: The surface defects induced by probe attachment play a crucial role in causing reverse leakage current in β-Ga2O3 SBDs, which is essential for the commercialization of power devices.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Applied
Sayleap Sdoeung et al.
Summary: Line-shaped defects were observed in halide vapor-phase epitaxial (001) beta-Ga2O3 SBDs, and these defects were found to be related to the reverse leakage current. Atomic force microscopy observation and simulation results showed that the formation of line-shaped defects originated from a dislocation network near the crystal surface.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Applied
Chenlu Wang et al.
Summary: In this study, high performance hysteresis-free and ps-switching depletion/enhancement-mode beta-Ga2O3 heterojunction field effect transistors (FETs) with state-of-the-art power figure-of-merit (P-FOM) were successfully established. The positive threshold voltage and low subthreshold slope were achieved by optimizing the p-NiOx/n-Ga2O3 interface and n-Ga2O3 recess technology. Incorporation of T-shaped NiOx improved the trade-off between on-resistance and breakdown voltage, resulting in the highest reported P-FOM among lateral Ga2O3 FETs. The high-quality interface allowed for negligible hysteresis and ps-switching, demonstrating the great potential of Ga2O3 HJ-FETs in high-power, high-efficiency, and high-speed power electronics.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Applied
Ken Goto et al.
Summary: The influence of substrate orientation on the homoepitaxial growth of beta-gallium oxide was investigated. It was found that the growth rate increased near the (001) substrate, but sharply decreased from (001) to (010) with triangular pits formed on the grown layer. The pits were found to originate from dislocations propagating in the substrate at an angle of 60° with respect to the (001) plane. A pit-free homoepitaxial layer was achieved when the substrate orientation was around 60°.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Applied
Hsien-Lien Huang et al.
Summary: The study highlights the importance of understanding point and extended defects in beta-gallium oxide for advancing material and device performance. Characterization works using advanced techniques provide insight into defect structures and their impact on key properties, contributing to atomic scale control for the next generation of power electronics applications.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Crystallography
Kazutada Ikenaga et al.
Summary: The effect of high temperature homoepitaxial growth of (010) beta-Ga2O3 layer by low pressure hot-wall metal-organic vapor phase epitaxy was investigated. The growth rate decreased and the growth mode changed as the growth temperature increased. A smooth, twin-free single-crystalline homoepitaxial layer with a structural quality equivalent to that of the substrate could be grown at 1000 degrees C. The grown layers were all n-type and showed an effective donor concentration approximately equal to the Si impurity concentration.
JOURNAL OF CRYSTAL GROWTH
(2022)
Article
Materials Science, Coatings & Films
Lingyu Meng et al.
Summary: In this study, the MOCVD growth of (100) beta-Ga2O3 on on-axis Ga2O3 substrates was comprehensively investigated. The dependence of growth conditions on surface morphology, growth rate, and electron transport properties of the thin films was studied. The results provide a fundamental understanding of MOCVD epitaxy and the limitations of electron transport properties in (100) beta-Ga2O3 thin films grown along the on-axis (100) crystal orientation.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2022)
Article
Chemistry, Multidisciplinary
Ming-Hsun Lee et al.
Summary: In this study, we demonstrate a significant improvement in Ti/Au ohmic contact performance by utilizing the anisotropic nature of ??-Ga2O3. Through comprehensive electrical and material characterization of Ti/Au metallization on different semiconductor orientations, we provide direct evidence and insights into the dependence of device performance on the atomic-scale structural anisotropy of ??-Ga2O3.
Article
Physics, Applied
Hsien-Chih Huang et al.
Summary: In this work, beta-Ga2O3 FinFETs with metalorganic chemical vapor deposition grown epitaxial Si-doped channel layer on (010) semi-insulating beta-Ga2O3 substrates are demonstrated. Smooth sidewalls of beta-Ga2O3 fin channels are achieved by the plasma-free MacEtch method. The FinFETs exhibit low on-resistance and high breakdown voltage with nearly zero hysteresis in DC transfer characteristics. The effect of channel orientation on device performance is also investigated.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Applied
Ta-Shun Chou et al.
Summary: (English Summary:)
This study proposes a Langmuir adsorption model for the Si incorporation mechanism into (100) beta-Ga2O3 thin films grown by metalorganic vapor-phase epitaxy, based on the competitive surface adsorption process between Si and Ga atoms. The model describes the major features of the doping process and shows a growth rate-dependent doping behavior, which is experimentally validated and further generalized to different growth conditions and substrate orientations.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Wenhui Zhang et al.
Summary: Heteroepitaxial beta-Ga2O3 thick films were successfully grown on sapphire substrates using carbothermal reduction method. The growth direction and surface morphology of the films were found to depend strongly on the orientation of the substrate. The fastest growth rate was achieved on c-plane sapphire substrate, with a thickness of approximately 30 μm after 2 hours. The films exhibited a pure-phase beta-Ga2O3 structure, with a bandgap ranging from 4.6 to 4.7 eV.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
Ke Zeng et al.
Summary: The lack of an effective current blocking layer in Ga2O3 has been a major barrier to achieving a vertical MOSFET. However, a selective diffusion doping technique utilizing magnesium-doped spin-on-glass has been used to form a current blocking layer, leading to the successful demonstration of a vertical Ga2O3 MOSFET for the first time.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Ming-Hsun Lee et al.
Summary: In this study, the anisotropic nature of monoclinic Ga2O3 was utilized to improve Ti/Au ohmic contact performance. The findings suggest that the dominant charge transport mechanism across the Ti/Au-Ga2O3 junction depends on whether reactive ion etching was used prior to metallization.
Article
Physics, Applied
Praneeth Ranga et al.
Summary: This study reports on the growth and characterization of metalorganic vapor-phase epitaxy-grown beta-(AlxGa1-x)(2)O-3/beta-Ga2O3 modulation-doped heterostructures. An electron channel is achieved in the heterostructure by utilizing a delta-doped beta-(AlxGa1-x)(2)O-3 barrier, with characteristics studied using various measurement methods. The fabricated transistor demonstrates high peak current and on-off ratio, while the electron channel in beta-(AlxGa1-x)(2)O-3 displays promising charge density and mobility at room temperature.
APPLIED PHYSICS EXPRESS
(2021)
Article
Physics, Applied
Man Hoi Wong et al.
Summary: An anomalous diode-like turn-on behavior was observed in the drain characteristics of current aperture vertical beta -Ga2O3 transistors, which was attributed to electron barrier created by negative fixed charges in the aperture opening. The study proposed possible role of point-defect diffusion in the performance and reliability of ion-implanted Ga2O3 devices.
APPLIED PHYSICS LETTERS
(2021)
Review
Materials Science, Coatings & Films
Ribhu Sharma et al.
Summary: The understanding of dopant and impurity diffusion in gallium oxide is still in its early stages, with high diffusion coefficients of impurities like H and F impacting electrical conductivity. Nitrogen annealing suppresses diffusion and loss of dopants, retaining a higher initial dose compared to oxygen annealing.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Engineering, Electrical & Electronic
Yibo Wang et al.
Summary: This study reports the significant improvement in mobility of GaOSiC MOSFETs with increasing postannealing temperature of Ga2O3 channel, indicating defects induced by ion-cutting process can be eliminated by high-temperature annealing. Additionally, the decrease in mobility within the accumulation regime of GaOSiC MOSFETs with increasing ambient temperature follows a T-amb(-1) law limited by phonon scattering.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Review
Physics, Applied
Chenlu Wang et al.
Summary: Gallium oxide (Ga2O3) is an emerging ultra-wide-bandgap semiconductor with desirable properties, widely used in power electronics and solar-blind ultraviolet photodetectors. This article reviews the latest advances in beta-Ga2O3 power device technologies and discusses solutions to challenging issues in the field.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Materials Science, Coatings & Films
Praneeth Ranga et al.
Summary: This study reports on the growth and characterization of Ge-doped beta-Ga2O3 thin films using a solid germanium source. By controlling the germanium vapor pressure, a wide range of Hall carrier concentrations were achieved, with different donor incorporation observed at varying growth rates. The results highlight the importance of reactor design and growth regime on impurity incorporation kinetics in beta-Ga2O3 for the design of high-power electronic devices.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Review
Materials Science, Coatings & Films
Alena Nikolskaya et al.
Summary: Gallium oxide, especially its thermodynamically stable beta-Ga2O3 phase, is considered one of the most exciting materials in research and technology due to its unique properties, with potential for green electronics. Ion implantation is a traditional method that can greatly contribute to the development of Ga2O3-based materials and devices. The current focus is on experimental studies of damage under ion irradiation and properties of Ga2O3 layers doped by ion implantation.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2021)
Article
Physics, Applied
Wenbo Tang et al.
Summary: High performance beta-Ga2O3 trench Schottky barrier diodes were fabricated using a novel etching technique called self-reactive etching (SRE). The devices exhibited excellent temperature-dependent electrical characteristics, negligible charge trapping and hysteresis, as well as high rectifying characteristics. The results suggest that SRE is beneficial for beta-Ga2O3 etching and the future development of beta-Ga2O3 power electronics.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Hiroyuki Nishinaka et al.
Summary: Utilizing mist chemical vapor deposition (CVD) process, rapid homoepitaxial growth of beta-Ga2O3 thin films with smooth surfaces was achieved using a concentrated aqueous solution of GaCl3 precursor.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Engineering, Electrical & Electronic
Man Hoi Wong et al.
IEEE ELECTRON DEVICE LETTERS
(2020)
Article
Physics, Applied
S. Bin Anooz et al.
APPLIED PHYSICS LETTERS
(2020)
Article
Nanoscience & Nanotechnology
P. Mazzolini et al.
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P. Mazzolini et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2020)
Article
Physics, Applied
A. F. M. Anhar Uddin Bhuiyan et al.
APPLIED PHYSICS LETTERS
(2020)
Article
Chemistry, Multidisciplinary
A. F. M. Anhar Uddin Bhuiyan et al.
CRYSTAL GROWTH & DESIGN
(2020)
Article
Engineering, Electrical & Electronic
Yanni Zhang et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Elena Fabris et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Chemistry, Physical
Trong Si Ngo et al.
JOURNAL OF ALLOYS AND COMPOUNDS
(2020)
Review
Materials Science, Coatings & Films
Yuxuan Zhang et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
(2020)
Article
Nanoscience & Nanotechnology
Sai Mu et al.
Article
Physics, Applied
Piero Mazzolini et al.
APPLIED PHYSICS LETTERS
(2020)
Article
Nanoscience & Nanotechnology
R. Schewski et al.
Article
Engineering, Electrical & Electronic
Chia-Hung Lin et al.
IEEE ELECTRON DEVICE LETTERS
(2019)
Proceedings Paper
Computer Science, Hardware & Architecture
Zongyang Hu et al.
2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)
(2019)
Review
Materials Science, Multidisciplinary
Marko J. Tadjer et al.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2019)
Article
Physics, Applied
Subrina Rafique et al.
APPLIED PHYSICS LETTERS
(2018)
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Masataka Higashiwaki et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2014)
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Guenter Wagner et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2014)
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Kohei Sasaki et al.
APPLIED PHYSICS EXPRESS
(2013)
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Takayoshi Oshima et al.
