Homoepitaxial growth of (100) Si-doped β-Ga2O3 films via MOCVD

Homoepitaxial growth of Si-doped beta-Ga2O3 films on semi-insulating (100) beta-Ga2O3 substrates by metalorganic chemical vapor deposition (MOCVD) is studied in this work. By appropriately optimizing the growth conditions, an increasing diffusion length of Ga adatoms is realized, suppressing 3D island growth patterns prevalent in (100) beta-Ga2O3 films and optimizing the surface morphology with [010] oriented stripe features. The slightly Si-doped beta-Ga2O3 film shows smooth and flat surface morphology with a root-mean-square roughness of 1.3 nm. Rocking curves of the (400) diffraction peak also demonstrate the high crystal quality of the Si-doped films. According to the capacitance-voltage characteristics, the effective net doping concentrations of the films are 5.41 x 10(15) - 1.74 x 10(20) cm(-3). Hall measurements demonstrate a high electron mobility value of 51 cm(2)/(V center dot s), corresponding to a carrier concentration of 7.19 x 10(18) cm(-3) and a high activation efficiency of up to 61.5%. Transmission line model (TLM) measurement shows excellent Ohmic contacts and a low specific contact resistance of 1.29 x 10(-4) omega center dot cm(2) for the Si-doped film, which is comparable to the Si-implanted film with a concentration of 5.0 x 10(19) cm(-3), confirming the effective Si doing in the MOCVD epitaxy.

Automated summary

This study investigates the homoepitaxial growth of Si-doped beta-Ga2O3 films on semi-insulating (100) beta-Ga2O3 substrates using metalorganic chemical vapor deposition (MOCVD). By optimizing the growth conditions, the diffusion length of Ga adatoms is increased, resulting in suppressed 3D island growth patterns and improved surface morphology. The Si-doped beta-Ga2O3 film demonstrates high crystal quality, smooth surface morphology, and effective Si doping.