☆ 4.1 Review

Volatile threshold switching memristor: An emerging enabler in the AIoT era

JOURNAL OF SEMICONDUCTORS (2023)

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Summary: This study utilizes transition metal oxide-based memristors as artificial dendrites and spike-firing soma to construct dendritic neuron units, achieving high-efficiency spatial-temporal information processing. A hardware-implemented dendritic neural network improves accuracy for human motion recognition and exhibits a 1000x advantage in power efficiency compared to a graphics processing unit.

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Diffusive Memristors with Uniform and Tunable Relaxation Time for Spike Generation in Event-Based Pattern Recognition

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Summary: This research improves the uniformity of relaxation time in diffusive memristors by engineering the device stack, and achieves tunability in relaxation time. An algorithm utilizing the tunable and uniform relaxation behavior for spike generation is implemented, and achieves high accuracy in object recognition.

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Effect of the Threshold Kinetics on the Filament Relaxation Behavior of Ag-Based Diffusive Memristors

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Summary: The study investigates the switching dynamics of diffusive memristors based on volatile electrochemical metallization (v-ECM) devices, identifying the importance of filament formation and growth process on its relaxation time through analysis of threshold kinetics and filament relaxation.

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Article Agriculture, Multidisciplinary

A wireless multi-channel low-cost lab-on-chip algae culture monitor AIoT system for algae farm

Yumin Liao et al.

Summary: This paper proposes an automatic temperature-controlled low-cost lab-on-chip small and intelligent algae culture AIoT system, which uses a lensless microfluidic system for image acquisition to achieve portable real-time tracking and analysis of algae cell culture. Additionally, an optimized algorithm reduces the computational complexity and power consumption of the neural network, leading to the successful implementation of a prototype system for algae culture acquisition.

COMPUTERS AND ELECTRONICS IN AGRICULTURE (2022)

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A Configurable Artificial Neuron Based on a Threshold-Tunable TiN/NbO&x2093;/Pt Memristor

Yongzhou Wang et al.

Summary: In this letter, the authors present a configurable neuron constructed using Memristors, which have simple structures and high-density integration. They design a memristor with a tunable threshold and demonstrate its ability to construct configurable neurons with different response curves. The results suggest that the device is suitable for maintaining homeostasis and improving the stability of computing systems.

IEEE ELECTRON DEVICE LETTERS (2022)

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Highly Reliable Selection Behavior With Controlled Ag Doping of Nano-Polycrystalline ZnO Layer for 3D X-Point Framework

Akshay Sahota et al.

Summary: In this study, a threshold switching (TS) selector with an Ag doping-based nano-polycrystalline ZnO switching layer was developed. The TS selector showed remarkable electroforming-free selection behavior, high device yield, and stable threshold voltage.

IEEE ELECTRON DEVICE LETTERS (2022)

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Correction Multidisciplinary Sciences

Visualizing group II intron dynamics between the first and second steps of splicing (vol 11, 2837, 2020)

Jacopo Manigrasso et al.

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Artificial Adaptive and Maladaptive Sensory Receptors Based on a Surface-Dominated Diffusive Memristor

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Summary: The development of artificial receptors with adaptive and maladaptive behaviors using diffusive memristors allows for direct emulation of biological receptors, representing a significant advancement in bioinspired technology for creating artificial intelligence systems.

ADVANCED SCIENCE (2022)

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Reconfigurable Synaptic and Neuronal Functions in a V/VOx/HfWOx/Pt Memristor for Nonpolar Spiking Convolutional Neural Network

Yaoyao Fu et al.

Summary: This study constructs a fully memristive neural network using reliable synaptic and neuronal devices and reconfigurable V/VOx/HfWOx/Pt memristive devices. The network successfully emulates typical neural dynamics, showing competency in pattern recognition with reduced hardware consumption. This work provides a direction for implementing fully memristive intelligent systems.

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A Photoelectric Spiking Neuron for Visual Depth Perception

Chunsheng Chen et al.

Summary: This study presents a highly bio-realistic photoelectric spiking neuron for visual depth perception. By utilizing memristive spiking encoders and a network of neuromorphic transistors, it imitates the distance-dependent response and eye fatigue of biological visual systems.

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A Heterogeneously Integrated Spiking Neuron Array for Multimode-Fused Perception and Object Classification

Jiaxue Zhu et al.

Summary: This paper reports a compact multimode-fused spiking neuron that achieves human-like multisensory perception with excellent data compression and conversion capabilities. It supports multimodal tactile perception and has been validated for practical applications in tactile pattern recognition and object classification.

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Artificial intelligence in green building

Caleb Debrah et al.

Summary: This study conducted a bibliometric-systematic analysis to investigate the state-of-the-art and future research directions of artificial intelligence in green building (AI-in-GB). The findings identified digital twins and AI of things, blockchain, robotics and 4D printing, and the legal, ethical, and moral responsibilities of AI-in-GB as key areas for future research in enhancing sustainability and efficiency in the Architecture, Engineering, and Construction (AEC) sector.

AUTOMATION IN CONSTRUCTION (2022)

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The Co-Improvement of Selectivity and Uniformity on NbOx-Based Selector by Al-Doping

Ao Chen et al.

Summary: Al-doped selectors demonstrate significant improvement in selectivity and uniformity. The thermoelectric coupling model explains the physical mechanism behind this enhancement, showing that lower OFF current, higher selectivity, and constrained oxygen vacancy migration contribute to improved uniformity.

IEEE ELECTRON DEVICE LETTERS (2022)

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An Artificial Spiking Nociceptor Integrating Pressure Sensors and Memristors

Jiaxue Zhu et al.

Summary: This letter reports an artificial spiking nociceptor integrating a pressure sensor and a NbOx-based memristor, which can emulate key features of biological nociceptors and is suitable for constructing efficient sensory systems and neural interfaces.

IEEE ELECTRON DEVICE LETTERS (2022)

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High-Yield and Uniform NbOx-Based Threshold Switching Devices for Neuron Applications

Pei Chen et al.

Summary: This study systematically investigates the effect of oxygen content on the performance of TS devices based on NbOx films. It is found that decreasing the oxygen content reduces the electroforming voltage and increases the forming yield. Additionally, inserting a high oxygen content NbOy layer improves the stability and uniformity of the devices.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

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Implementation of Neuronal Intrinsic Plasticity by Oscillatory Device in Spiking Neural Network

Lindong Wu et al.

Summary: This article examines the application of neuronal intrinsic plasticity in neural networks. By adjusting the tunable load resistor and stimulus intensity, the oscillatory threshold of artificial neurons is studied. The results demonstrate that neuronal intrinsic plasticity can improve the performance of neural networks.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

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Memristive structure of Nb/HfOx/Pd with controllable switching mechanisms to perform featured actions in neuromorphic networks

Junwei Yu et al.

Summary: This study proposes a memristor based on the Nb/HfOx/Pd structure, which has controllable resistive switching mechanisms and potential for mimicking neural functions, as well as large-scale fabrication. Additionally, the system exhibits special signal encoding and recognition features according to chaos circuit theory.

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A High-Performance Ag/TiN/HfOx/HfOy/HfOx/Pt Diffusive Memristor for Calibration-Free True Random Number Generator

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Prospects and applications of volatile memristors

Dahye Kim et al.

Summary: With the increasing attention on artificial intelligence, there is a growing interest in efficient hardware for processing complex and large amounts of information. Volatile memristors, as a promising emerging memory semiconductor device, have various features suitable for neuro-inspired applications. This comprehensive review provides a physical interpretation and latest research trends on the switching mechanisms of volatile memristors, and also explores diverse promising applications. Understanding the future directions of volatile memristors and their applications is discussed.

APPLIED PHYSICS LETTERS (2022)

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Compact artificial neuron based on anti-ferroelectric transistor

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Impact of Ag doping on subthreshold conduction in amorphous Ga2Te3 with threshold switching

Jaeyeon Kim et al.

Summary: Threshold switching devices with Ag-doped amorphous chalcogenides exhibit improved threshold switching characteristics, including high selectivity and low subthreshold current. The study investigates the effects of Ag doping in amorphous Ga2Te3, revealing the formation of Ag-Te bonds and a decrease in Te-Te bonds. Additionally, Ag doping leads to an increase in the optical bandgap and a decrease in Urbach energy. The subthreshold current of Ag-doped Ga2Te3 devices is reduced by a factor of seven, indicating increased selectivity. Furthermore, analysis using a thermally assisted hopping model shows a decrease in the density of localized states. Therefore, the enhanced threshold switching characteristics of Ag-doped Ga2Te3 are attributed to the reduction of Te-induced localized states and the formation of Ag-Te bonds.

JOURNAL OF ALLOYS AND COMPOUNDS (2022)

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A compute-in-memory chip based on resistive random-access memory

Weier Wan et al.

Summary: This study presents NeuRRAM, a RRAM-based CIM chip that offers versatility, high energy efficiency, and accuracy. By co-optimizing algorithms, architecture, circuits, and devices, the chip can be reconfigured for different model architectures and provides twice the energy efficiency of previous state-of-the-art RRAM-CIM chips across various computational bit-precisions. It achieves inference accuracy comparable to software models quantized to four-bit weights across various AI tasks.

NATURE (2022)

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Characterization and Modelling of Flexible VO2 Mott Memristor for the Artificial Spiking Warm Receptor

Chuan Yu Han et al.

Summary: In this study, high-performance VO2 Mott memristors were fabricated on flexible substrates, and their electrical properties were well modeled. A flexible artificial spiking warm receptor was created using this memristor, and the effects of its electrical properties on the spiking frequency were thoroughly studied, demonstrating response characteristics similar to biological warm receptors.

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A systematic survey of Internet of Things frameworks for smart city applications

Jose Joaquin Peralta Abadia et al.

Summary: Recent developments in smart sensing technologies have led to the widespread use of smart city applications that rely on IoT frameworks. However, the definitions of smart city and IoT framework vary. This study aims to consolidate these definitions and provide a systematic survey of IoT frameworks for smart city applications, ultimately proposing an abstract IoT framework concept.

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A Stacked Memristive Device Enabling Both Analog and Threshold Switching Behaviors for Artificial Leaky Integrate and Fire Neuron

Jingyao Bian et al.

Summary: This paper introduces a stacked memristor-based LIF neuron that can accomplish integration and firing functions and successfully mimics key functions of biological neurons. The fabricated neurons have great potential for constructing high-density spiking neural networks for neuromorphic computing.

IEEE ELECTRON DEVICE LETTERS (2022)

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Reliable Low Voltage Selector Device Technology Based on Robust SiNGeCTe Arsenic-Free Chalcogenide

Elia Ambrosi et al.

Summary: This letter introduces a new material called SiNGeCTe for low voltage selector applications and reports its remarkable reliability characteristics. By incorporating Si dopant, the material exhibits enhanced robustness and reduced impact on subthreshold conduction. The study also reveals a clear trend between drift slope and chalcogenide layer thickness. The optimized device with 5 nm thickness demonstrates low threshold voltage drift and excellent cycling endurance.

IEEE ELECTRON DEVICE LETTERS (2022)

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Improved threshold switching characteristics of vanadium oxide/oxynitride-based multilayer selector in a cross-point array

Dae Yun Kang et al.

Summary: In this study, we developed a selector device with the bi-directional threshold switching characteristics of vanadium oxide (VOx) by implementing vanadium oxynitride (VOx:Ny) in a sandwich structure. Compared to a cell with a Pt/VOx/Pt structure, the proposed device with the Pt/VOx:Ny/VOx/VOx:Ny/Pt structure exhibits lower off-current and stable switching characteristics, and its memory characteristics were verified using resistive switching devices.

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Min-Chie Chiu et al.

Summary: Due to labor shortages, Taiwan and the rest of the world face issues in aquaculture. This study proposes a smart IoT-based fish monitoring and control system to solve the problems in Taiwan's aquaculture sector. In addition, a deep learning model is developed to predict the growth of fish. The experimental results demonstrate the applicability of the model. The system can assist aquaculture operators in controlling and managing fishpond equipment remotely, reducing costs and promoting the development of the aquaculture industry.

JOURNAL OF AGRICULTURE AND FOOD RESEARCH (2022)

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Artificial Intelligence-Enabled Sensing Technologies in the 5G/Internet of Things Era: From Virtual Reality/Augmented Reality to the Digital Twin

Zixuan Zhang et al.

Summary: With the booming development of 5G and IoT, big data-driven product design is on the rise. The digital twin, empowered by AI algorithms, serves as a cutting-edge technology connecting the physical and virtual worlds through the analysis of various sensor data. However, the high-power consumption and battery replacement issues associated with existing sensor technologies remain to be solved. Triboelectric nanogenerators (TENGs) provide a viable platform for self-sustainable and low-power systems. This article focuses on the recent progress of TENG-based intelligent systems, such as wearable electronics, robot-related systems, and smart homes, and explores the potential future development enabled by sensor fusion technology. Lastly, it discusses the application of artificial intelligence in the design of intelligent sensor systems for the 5G and IoT era.

ADVANCED INTELLIGENT SYSTEMS (2022)

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Artificial Multisensory Neurons with Fused Haptic and Temperature Perception for Multimodal In-Sensor Computing

Qingxi Duan et al.

Summary: This paper presents a bioinspired haptic-temperature fusion spiking neuron based on a serial connection of piezoresistive sensor and VO2 volatile memristor, which is capable of recognizing multimodal haptic/temperature patterns. This artificial multisensory neuron has significant implications for future e-skin, neurorobotics, and human-machine interaction technologies.

ADVANCED INTELLIGENT SYSTEMS (2022)

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Semantic segmentation for multiscale target based on object recognition using the improved Faster-RCNN model

Du Jiang et al.

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FUTURE GENERATION COMPUTER SYSTEMS-THE INTERNATIONAL JOURNAL OF ESCIENCE (2021)

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Low power Ti-doped NbO2-based selector device with high selectivity and low OFF current

Dong Su Jeon et al.

Summary: The use of NbO2 as a selector device in crossbar array-based resistive memory is proposed to address the sneak current path problem, allowing for rapid insulator-metal transition and achieving a high ION/IOFF ratio.

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Chao-Tung Yang et al.

Summary: Air pollution is a major concern for public health and the environment, and monitoring with low-cost devices can help collect data for various applications. The integration of IoT-based systems and AI can improve precision in sensor networks and provide better resolution in PM monitoring and control.

JOURNAL OF HAZARDOUS MATERIALS (2021)

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Elemental electrical switch enabling phase segregation-free operation

Jiabin Shen et al.

Summary: The research introduces a single-element tellurium (Te) volatile switch with high drive current density, large ON/OFF current ratio, and fast switching speed, which may help realize denser memory chips.

SCIENCE (2021)

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Operando characterization of conductive filaments during resistive switching in Mott Vo2

Shaobo Cheng et al.

Summary: Vanadium dioxide (VO2) is capable of metal-insulator transition and resistive switching, making it suitable for neuromorphic computing hardware. This study reveals the mechanisms of both volatile and nonvolatile switching in VO2, which can emulate neuronal and synaptic behaviors, respectively, providing a comprehensive understanding of resistive switching crucial for neuromorphic computing development.

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA (2021)

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Memristor-based biomimetic compound eye for real-time collision detection

Yan Wang et al.

Summary: The study developed an artificial LGMD visual neuron using light-mediated threshold switching memristor to mimic the escape response of LGMD neuron. Additionally, robot navigation with obstacle avoidance capability and biomimetic compound eyes with wide field-of-view detection capability were demonstrated.

NATURE COMMUNICATIONS (2021)

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Article Materials Science, Ceramics

Forming-free, ultra-high on-state current, and self-compliance selector based on titanium-doped NbOx thin films

Dalei Chen et al.

Summary: Doping titanium into niobium oxide enables NbO2-based selectors to effectively suppress cross-talk interference between memory cells, with stable performance and typical threshold switching behavior. The doped device exhibits forming-free operation, ultra-high on-state current, and self-compliance properties, making it suitable for high-density cross-point nonvolatile memory arrays.

CERAMICS INTERNATIONAL (2021)

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Article Engineering, Electrical & Electronic

12.7 MA/cm2 On-Current Density and High Uniformity Realized in AgGeSe/Al2O3 Selectors

Tian-Qing Wan et al.

Summary: The AgGeSe/Al2O3/Pt selector offers high on-current drive, selectivity, minimal variation, thermal stability, and steep switching slope, making it a promising candidate for selector application.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Engineering, Electrical & Electronic

Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Doping

Lun Wang et al.

Summary: In this study, a C-doped GeTex Ovonic threshold switching (OTS) selector with a via-hole structure was fabricated, showing comparable performance to commercial GeSe-based selectors. The selector demonstrated low off-current, low threshold voltage, a large voltage window, high selectivity, satisfactory endurance, and fast operating speed. Additionally, the selector exhibited self-limited on-current characteristics, with reasons behind the off-current reduction and consistency improvement by C doping studied through First-principles calculations.

IEEE ELECTRON DEVICE LETTERS (2021)

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Article Engineering, Electrical & Electronic

Ultrahigh Uniformity and Stability in NbOx-Based Selector for 3-D Memory by Using Ru Electrode

Xiaohu Zhao et al.

Summary: The high-performance Pt/NbOx/Ru selector based on metal-insulator transition demonstrates low leakage current, excellent endurance, and ultrahigh uniformity, making it a promising option for achieving 3-D storage integration. The use of Ru in the selector enhances uniformity and stability, potentially benefiting the industry.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

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Article Chemistry, Multidisciplinary

A Tantalum Disulfide Charge-Density-Wave Stochastic Artificial Neuron for Emulating Neural Statistical Properties

Hefei Liu et al.

Summary: The study reports on the stochastic behaviors of a neuronal oscillator based on a 1T-TaS2 thin film, demonstrating its capability to generate spike trains closely resembling those of biological neurons. The stochastic behaviors of the device are attributed to the reconfiguration of CDW domains during each oscillation cycle. This compact two-terminal neuronal oscillator can realize many key features of neuron description.

NANO LETTERS (2021)

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Article Multidisciplinary Sciences

Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor

Gwangmin Kim et al.

Summary: This study introduces a novel method for generating true random numbers using NbOx mott memristors, with a fast generation rate and high tolerance, suitable for security hardware devices. Additionally, the authors leverage the oscillating behavior of Mott memristors to achieve high bit rates and endurance.

NATURE COMMUNICATIONS (2021)

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Article Physics, Applied

Improved uniformity and threshold voltage in NbOx-ZrO2 selectors

Ao Chen et al.

Summary: This study demonstrates a high-performance ZrO2/NbOx threshold switching selector with low threshold voltage, ultra-high uniformity, and excellent voltage stability, optimizing performance through oxygen storage properties.

APPLIED PHYSICS LETTERS (2021)

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Article Computer Science, Theory & Methods

Network embedding enhanced intelligent recommendation for online social networks

Jianghao Li et al.

Summary: The fast development of Internet technology has led to the importance of intelligent recommendation services. Providing accurate recommendations is crucial for user experience, and dealing with large scale networks poses significant challenges.

FUTURE GENERATION COMPUTER SYSTEMS-THE INTERNATIONAL JOURNAL OF ESCIENCE (2021)

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Article Multidisciplinary Sciences

Spatiotemporal characterization of the field-induced insulator-to-metal transition

Javier del Valle et al.

Summary: The study utilized in-operando optical reflectivity to investigate the growth dynamics of the metallic phase, revealing that filament formation is triggered by nucleation at hotspots. By comparing three case studies, the resistivity change was identified as the crucial parameter governing this process.

SCIENCE (2021)

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Review Nanoscience & Nanotechnology

Application of Resistive Random Access Memory in Hardware Security: A Review

Gokulnath Rajendran et al.

Summary: Advancements in trusted system environments now rely on hardware-based security provided by emerging nonvolatile memory devices like RRAM. RRAM offers high-density integration, outstanding performance, and multi-bit storage capability. These characteristics make RRAM suitable for designing security hardware, such as Physical Unclonable Function and hash function.

ADVANCED ELECTRONIC MATERIALS (2021)

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Proceedings Paper Engineering, Electrical & Electronic

Low variability high endurance and low voltage arsenic-free selectors based on GeCTe

E. Ambrosi et al.

Summary: This study focused on the performance selectors needed for low voltage high density non-volatile memories in data intensive applications, emphasizing endurance, thermal stability, and variability. Experimental results revealed significant endurance levels for GeCTe selectors, along with enhanced thermal stability and low threshold voltage cycle-to-cycle variation.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

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Proceedings Paper Engineering, Electrical & Electronic

Unified 0.75pJ/Bit TRNG and Attack Resilient 2F2/Bit PUF for Robust Hardware Security Solutions with 4-layer Stacking 3D NbOx Threshold Switching Array

Qingting Ding et al.

Summary: In this study, a unified approach to combine TRNG and PUF function was demonstrated in a 4-layer 3D TS NbOx array. The proposed TRNG showed ultra-low energy consumption and excellent immunity against power noise attack, while the proposed PUF achieved high key density and resistance against machine learning attack. This work provided hardware solution for low-cost secure integrated systems.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

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Proceedings Paper Engineering, Electrical & Electronic

Forming-free and Annealing-free V/VOx/HfWOx/Pt Device Exhibiting Reconfigurable Threshold and Resistive switching with high speed (<30ns) and high endurance (>1012/>1010)

Yaoyao Fu et al.

Summary: This study demonstrates for the first time the fully reconfigurable switching between selector and RRAM in one device without electroforming or high-temperature annealing processes. The device shows different characteristics in selector mode and RRAM mode, which can be utilized to emulate electronic neurons and synapses, leading to a significantly reduced latency (about 500 ns) and lower power consumption (about 10 fJ per operation for one synapse) in a memristive spiking neural network.

2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2021)

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Article Engineering, Electrical & Electronic

Improved Turn-Off Speed and Uniformity of Atomic Threshold Switch Device by AgSe Electrode and Bipolar Pulse Forming

Seungyeol Oh et al.

Summary: The use of AgSe electrode and controlled bipolar pulse forming method improves the turn-off speed and uniformity of atomic threshold switching (TS) devices. By forming atomic-scale filament under positive bias and drifting back excessive Ag by negative bias, the TS device with AgSe electrode shows promise for selector applications.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2021)

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Article Computer Science, Information Systems

Abruptly-Switching MoS2-Channel Atomic-Threshold-Switching Field-Effect Transistor With AgTi/HfO2-Based Threshold Switching Device

Sojin Jeong et al.

Summary: By optimizing the Ag/HfO2-based TS device and inserting a Ti injection barrier layer, a stable and optimized performance for the 2D atomic-threshold-switching field-effect transistor (ATS-FET) was achieved.

IEEE ACCESS (2021)

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Proceedings Paper Engineering, Electrical & Electronic

Artificial Neuron with Spike Frequency Adaptation Based on Mott Memristor

Qiumeng Wei et al.

Summary: By integrating a Mott memristor with an adaptation unit, an artificial neuron with spike frequency adaptation (SFA) characteristic is demonstrated. The simulated classification accuracy on the MNIST dataset is improved from 80.21% to 83.3% by incorporating SFA, and the resulting uniform neuronal activities also alleviate the device requirements on endurance and uniformity (>4x) in the hardware implementation of SNN.

2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) (2021)

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A High-Speed True Random Number Generator Based on a CuxTe1-x Diffusive Memristor

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Summary: In this study, a true random number generator based on a CuxTe1-x diffusive memristor using its threshold switching behavior is reported. The TRNG system showed excellent performance in passing all 15 NIST randomness tests without post-processing and even in high-temperature conditions. Additionally, a high-speed TRNG with a nonlinear-feedback shift register was implemented, demonstrating the highest rate among reported volatile-memristor-based TRNGs.

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TBM: A trust-based monitoring security scheme to improve the service authentication in the Internet of Things communications

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GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator

Zheng Chai et al.

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Fog-based smart homes: A systematic review

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Ultrafast machine vision with 2D material neural network image sensors

Lukas Mennel et al.

NATURE (2020)

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Fully hardware-implemented memristor convolutional neural network

Peng Yao et al.

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Ovonic Threshold Switching in Se-Rich GexSe1-x Glasses from an Atomistic Point of View: The Crucial Role of the Metavalent Bonding Mechanism

Jean-Yves Raty et al.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2020)

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An artificial spiking afferent nerve based on Mott memristors for neurorobotics

Xumeng Zhang et al.

NATURE COMMUNICATIONS (2020)

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Article Physics, Applied

Oxide-based selector with trap-filling-controlled threshold switching

Shuhei Saitoh et al.

APPLIED PHYSICS LETTERS (2020)

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Review Physics, Applied

A comprehensive review on emerging artificial neuromorphic devices

Jiadi Zhu et al.

APPLIED PHYSICS REVIEWS (2020)

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Experimental Determination of the Tunable Threshold Voltage Characteristics in a AgxTe1-x/Al2O3/TiO2-Based Hybrid Memory Device

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IEEE ELECTRON DEVICE LETTERS (2020)

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Article Nanoscience & Nanotechnology

A Combination of a Volatile-Memristor-Based True Random-Number Generator and a Nonlinear-Feedback Shift Register for High-Speed Encryption

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Article Engineering, Electrical & Electronic

Low-Power Artificial Neurons Based on Ag/TiN/HfAlOx/Pt Threshold Switching Memristor for Neuromorphic Computing

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IEEE ELECTRON DEVICE LETTERS (2020)

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2D MoS2-Based Threshold Switching Memristor for Artificial Neuron

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IEEE ELECTRON DEVICE LETTERS (2020)

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Self-Selective Resistive Device With Hybrid Switching Mode for Passive Crossbar Memory Application

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IEEE ELECTRON DEVICE LETTERS (2020)

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Article Chemistry, Physical

Leaky integrate-and-fire neurons based on perovskite memristor for spiking neural networks

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NANO ENERGY (2020)

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Article Nanoscience & Nanotechnology

Controlled Memory and Threshold Switching Behaviors in a Heterogeneous Memristor for Neuromorphic Computing

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ADVANCED ELECTRONIC MATERIALS (2020)

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Article Multidisciplinary Sciences

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SCIENCE ADVANCES (2020)

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Review Chemistry, Multidisciplinary

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Artificial Nociceptor Using 2D MoS2 Threshold Switching Memristor

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IEEE ELECTRON DEVICE LETTERS (2020)

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Self-Activation Neural Network Based on Self-Selective Memory Device With Rectified Multilevel States

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IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

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Article Multidisciplinary Sciences

Non-thermal resistive switching in Mott insulator nanowires

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NATURE COMMUNICATIONS (2020)

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Spiking neurons with spatiotemporal dynamics and gain modulation for monolithically integrated memristive neural networks

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Ultrahigh drive current and large selectivity in GeS selector

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NATURE COMMUNICATIONS (2020)

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Review Nanoscience & Nanotechnology

Design of a Controllable Redox-Diffusive Threshold Switching Memristor

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ADVANCED ELECTRONIC MATERIALS (2020)

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Article Chemistry, Multidisciplinary

High-Uniformity Threshold Switching HfO2-Based Selectors with Patterned Ag Nanodots

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ADVANCED SCIENCE (2020)

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Proceedings Paper Engineering, Electrical & Electronic

Fully Memristive SNNs with Temporal Coding for Fast and Low-power Edge Computing

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2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2020)

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Article Engineering, Electrical & Electronic

Enhancing Threshold Switching Characteristics and Stability of Vanadium Oxide-Based Selector With Vanadium Electrode

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IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

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Near-sensor and in-sensor computing

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Recent Advances of Volatile Memristors: Devices, Mechanisms, and Applications

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A Highly Transparent Artificial Photonic Nociceptor

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ADVANCED MATERIALS (2019)

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A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X-Point Memory Applications

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ADVANCED SCIENCE (2019)

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Review Nanoscience & Nanotechnology

Stochastic Memory Devices for Security and Computing

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ADVANCED ELECTRONIC MATERIALS (2019)

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Composition-Controlled Atomic Layer Deposition of Phase-Change Memories and Ovonic Threshold Switches with High Performance

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Ovonic threshold switching selectors for three-dimensional stackable phase-change memory

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MRS BULLETIN (2019)

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Article Engineering, Electrical & Electronic

Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors

Benjamin Grisafe et al.

IEEE ELECTRON DEVICE LETTERS (2019)

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Article Chemistry, Multidisciplinary

Performance-Enhancing Selector via Symmetrical Multilayer Design

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ADVANCED FUNCTIONAL MATERIALS (2019)

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Quasi-Hodgkin-Huxley Neurons with Leaky Integrate-and-Fire Functions Physically Realized with Memristive Devices

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ADVANCED MATERIALS (2019)

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Article Engineering, Electrical & Electronic

Steep Slope Silicon-On-Insulator Feedback Field-Effect Transistor: Design and Performance Analysis

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IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)

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Article Chemistry, Physical

Self-Modulating Interfacial Cation Migration Induced Threshold Switching in Bilayer Oxide Memristive Device

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JOURNAL OF PHYSICAL CHEMISTRY C (2019)

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Article Nanoscience & Nanotechnology

A True Random Number Generator Using Threshold-Switching-Based Memristors in an Efficient Circuit Design

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ADVANCED ELECTRONIC MATERIALS (2019)

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Review Nanoscience & Nanotechnology

Designing crystallization in phase-change materials for universal memory and neuro-inspired computing

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NATURE REVIEWS MATERIALS (2019)

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Article Nanoscience & Nanotechnology

Nitrogen-Induced Filament Confinement Technique for a Highly Reliable Hafnium-Based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits

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ACS APPLIED MATERIALS & INTERFACES (2019)

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Increasing Trapped Carrier Density in Nanoscale GeSeAs Films by As Ion Implantation for Selector Devices in 3D-Stacking Memory

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ACS APPLIED NANO MATERIALS (2019)

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Proceedings Paper Engineering, Electrical & Electronic

Capacitor-less Stochastic Leaky-FeFET Neuron of Both Excitatory and Inhibitory Connections for SNN with Reduced Hardware Cost

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2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) (2019)

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Flexible artificial nociceptor using a biopolymer-based forming-free memristor

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NANOSCALE (2019)

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Proceedings Paper Engineering, Electrical & Electronic

Tunable Performances in OTS Selectors Thanks to Ge3Se7-As2Te3

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2019 IEEE 11TH INTERNATIONAL MEMORY WORKSHOP (IMW 2019) (2019)

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Breaking the Current-Retention Dilemma in Cation-Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

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ADVANCED MATERIALS (2018)

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Unique Bond Breaking in Crystalline Phase Change Materials and the Quest for Metavalent Bonding

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CMOS compatible low-power volatile atomic switch for steep-slope FET devices

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APPLIED PHYSICS LETTERS (2018)

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An Artificial Neuron Based on a Threshold Switching Memristor

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IEEE ELECTRON DEVICE LETTERS (2018)

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A C-Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application

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NANOTECHNOLOGY (2018)

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Article Chemistry, Physical

Structural signature and transition dynamics of Sb2Te3 melt upon fast cooling

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PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2018)

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Flexible cation-based threshold selector for resistive switching memory integration

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SCIENCE CHINA-INFORMATION SCIENCES (2018)

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An artificial nociceptor based on a diffusive memristor

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NATURE COMMUNICATIONS (2018)

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Solution-Processed Flexible Threshold Switch Devices

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ADVANCED ELECTRONIC MATERIALS (2018)

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Threshold Switching Behavior of Ag-SiTe-Based Selector Device and Annealing Effect on Its Characteristics

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IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2018)

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Article Physics, Applied

Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device

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APPLIED PHYSICS LETTERS (2018)

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Zn1-xTex Ovonic Threshold Switching Device Performance and its Correlation to Material Parameters

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SCIENTIFIC REPORTS (2018)

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Incipient Metals: Functional Materials with a Unique Bonding Mechanism

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A Study on OTS-PCM Pillar Cell for 3-D Stackable Memory

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IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)

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Isostructural metal-insulator transition in VO2

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Highly Compact Artificial Memristive Neuron with Low Energy Consumption

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Fully memristive neural networks for pattern classification with unsupervised learning

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Robust memristors based on layered two-dimensional materials

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Analogue signal and image processing with large memristor crossbars

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Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

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NATURE MATERIALS (2017)

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Simple Binary Ovonic Threshold Switching Material SiTe and Its Excellent Selector Performance for High-Density Memory Array Application

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IEEE ELECTRON DEVICE LETTERS (2017)

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Article Engineering, Electrical & Electronic

Negative Capacitance FinFET With Sub-20-mV/decade Subthreshold Slope and Minimal Hysteresis of 0.48 V

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IEEE ELECTRON DEVICE LETTERS (2017)

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Sparse coding with memristor networks

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Physical origins of current and temperature controlled negative differential resistances in NbO2

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In situ click chemistry generation of cyclooxygenase-2 inhibitors

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Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices

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APPLIED PHYSICS LETTERS (2017)

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Anatomy of Ag/Hafnia-Based Selectors with 1010 Nonlinearity

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ADVANCED MATERIALS (2017)

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Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor

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CHEMICAL COMMUNICATIONS (2016)

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Volatile and Non-Volatile Switching in Cu-SiO2 Programmable Metallization Cells

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IEEE ELECTRON DEVICE LETTERS (2016)

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Article Nanoscience & Nanotechnology

Electrode-induced digital-to-analog resistive switching in TaOx-based RRAM devices

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NANOTECHNOLOGY (2016)

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Bidirectional threshold switching characteristics in Ag/ZrO2/Pt electrochemical metallization cells

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AIP ADVANCES (2016)

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Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application

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APPLIED PHYSICS LETTERS (2015)

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Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array

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IEEE ELECTRON DEVICE LETTERS (2015)

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Training andoperation of an integrated neuromorphic network based on metal-oxide memristors

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A steep-slope transistor based on abrupt electronic phase transition

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NATURE COMMUNICATIONS (2015)

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Parallel Architecture With Resistive Crosspoint Array for Dictionary Learning Acceleration

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IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS (2015)

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Impact of the Mechanical Stress on Switching Characteristics of Electrochemical Resistive Memory

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A photoinduced metal-like phase of monoclinic VO2 revealed by ultrafast electron diffraction

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Electrochemical dynamics of nanoscale metallic inclusions in dielectrics

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Integration of nanoscale memristor synapses in neuromorphic computing architectures

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A scalable neuristor built with Mott memristors

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NATURE MATERIALS (2013)

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Role of Thermal Heating on the Voltage Induced Insulator-Metal Transition in VO2

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PHYSICAL REVIEW LETTERS (2013)

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Article Physics, Applied

Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

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APPLIED PHYSICS LETTERS (2012)

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Nanosecond threshold switching of GeTe6 cells and their potential as selector devices

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APPLIED PHYSICS LETTERS (2012)

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Invited Paper: Thin-Film Ovonic Threshold Switch: Its Operation and Application in Modern Integrated Circuits

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ELECTRONIC MATERIALS LETTERS (2012)

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Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices

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NANOTECHNOLOGY (2012)

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Observation of conducting filament growth in nanoscale resistive memories

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NATURE COMMUNICATIONS (2012)

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Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

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APPLIED PHYSICS LETTERS (2011)

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Thermodynamic Properties of Niobium Oxides

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JOURNAL OF CHEMICAL AND ENGINEERING DATA (2010)

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A unified model of nucleation switching

M. Nardone et al.

APPLIED PHYSICS LETTERS (2009)

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Recovery and drift dynamics of resistance and threshold voltages in phase-change memories

Daniele Ielmini et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2007)

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Orbital-assisted metal-insulator transition in VO2 -: art. no. 196404

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PHYSICAL REVIEW LETTERS (2005)

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Dynamical singlets and correlation-assisted peierls transition in VO2 -: art. no. 026404

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PHYSICAL REVIEW LETTERS (2005)

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