☆ 4.7 Article

Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor

MATERIALS TODAY ADVANCES (2023)

相关参考文献

注意：仅列出部分参考文献，下载原文获取全部文献信息。

Article Engineering, Electrical & Electronic

Negative Capacitance Gate-All-Around Tunnel FETs for Highly Sensitive Label-Free Biosensors

Fahimul Islam Sakib et al.

Summary: A nanoscale biosensor based on negative capacitance gate-all-around tunnel field-effect transistor (NC-GAA-TFET) is proposed for high sensitivity and label-free detection. The sensor shows significant improvement in current sensitivity compared to traditional devices, with the ability to detect biomolecules and pH changes while maintaining low power consumption and high signal-to-noise ratio.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

添加到收藏夹

Article Chemistry, Multidisciplinary

Ultra-Steep-Slope High-Gain MoS2 Transistors with Atomic Threshold-Switching Gate

Jun Lin et al.

Summary: This study demonstrates ultra-low subthreshold swing (SS) and ultra-steep slope by integrating atomic-scale resistive filament with conventional MoS2 transistors. The nanoscale resistive filament ensures rapid device switching, leading to ultra-steep SS. The study also shows high on/off ratio and superior reproducibility and reliability. These findings provide exciting potential for future low-power electronics and monolithic integration.

ADVANCED SCIENCE (2022)

添加到收藏夹

Article Nanoscience & Nanotechnology

A High-Speed Photodetector Fabricated with Tungsten-Doped MoS2 by Ion Implantation

Rui Chen et al.

Summary: Molybdenum disulfide (MoS2) is a promising 2D semiconductor material with unique characteristics. This study demonstrates the effective use of substitutional metal doping, achieved through tungsten ion implantation and chemical vapor deposition, to modulate the energy bandgap and improve the performance of MoS2. The W-doped MoS2 photodetectors exhibit high-speed response and this work provides a novel doping strategy for 2D materials.

ADVANCED ELECTRONIC MATERIALS (2022)

添加到收藏夹

Article Chemistry, Physical

Threshold voltage control of carbon nanotube-based synaptic transistors via chemical doping for plasticity modulation and symmetry improvement

Mingxu Song et al.

Summary: This study demonstrates the tunability of threshold voltage and plasticity modulation in carbon nanotube-based FETs through chemical doping, which enhances both excitatory and inhibitory synaptic behaviors. The improved symmetry contributes to increased recognition accuracy for handwritten digits, offering an alternative strategy for developing future neuromorphic devices.

CARBON (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Steep-Switching Fully Depleted Silicon-on-Insulator (FDSOI) Phase-Transition Field-Effect Transistor With Optimized HfO2/Al2O3-Multilayer-Based Threshold Switching Device

Sangwoo Han et al.

Summary: By implementing a multilayered HfO2/Al2O3 and adjusting the work function of the bottom electrode, the resistance and threshold voltage of HfO2-based threshold-switching devices can be improved, leading to enhanced performance of phase-transition FDSOI devices.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

添加到收藏夹

Article Multidisciplinary Sciences

Benchmarking monolayer MoS2 and WS2 field-effect transistors

Amritanand Sebastian et al.

Summary: The study benchmarks device-to-device variation in FETs based on MoS2 and WS2, showing consistent performance and record high carrier mobility in WS2 FETs.

NATURE COMMUNICATIONS (2021)

添加到收藏夹

Article Chemistry, Multidisciplinary

Steep-Slope Gate-Connected Atomic Threshold Switching Field-Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors

Seung-Geun Kim et al.

Summary: A gate-connected MoS2 atomic threshold switching FET using a nitrogen-doped HfO2-based threshold switching device has been developed, achieving extremely low subthreshold swings and a high on-off ratio, with excellent optical properties for functioning as an infrared detectable phototransistor.

ADVANCED SCIENCE (2021)

添加到收藏夹

Review Chemistry, Multidisciplinary

Energy-efficient transistors: suppressing the subthreshold swing below the physical limit

Yongbiao Zhai et al.

Summary: Power consumption is a fundamental issue for micro-nano electronic circuits due to the miniaturization of electronic components. To address this, new transistor architectures have been designed to reduce subthreshold swing, lower the supply voltage, and decrease power consumption.

MATERIALS HORIZONS (2021)

添加到收藏夹

Article Engineering, Electrical & Electronic

Opportunities in Device Scaling for 3-nm Node and Beyond: FinFET Versus GAA-FET Versus UFET

Uttam Kumar Das et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

添加到收藏夹

Article Multidisciplinary Sciences

Atomic threshold-switching enabled MoS2 transistors towards ultralow-power electronics

Qilin Hua et al.

NATURE COMMUNICATIONS (2020)

添加到收藏夹

Article Engineering, Electrical & Electronic

Performance Enhancement of Ag/HfO2 Metal Ion Threshold Switch Cross-Point Selectors

Benjamin Grisafe et al.

IEEE ELECTRON DEVICE LETTERS (2019)

添加到收藏夹

Article Nanoscience & Nanotechnology

Nitrogen-Induced Filament Confinement Technique for a Highly Reliable Hafnium-Based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits

Jae-Hyeun Park et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

添加到收藏夹

Article Engineering, Electrical & Electronic

External Resistor-Free Gate Configuration Phase Transition FDSOI MOSFET

Jaemin Shin et al.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)

添加到收藏夹

Article Nanoscience & Nanotechnology

2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p(+)-WSe2 Source

Junyang He et al.

ADVANCED ELECTRONIC MATERIALS (2018)

添加到收藏夹

Article Chemistry, Multidisciplinary

Insights into 2D MXenes for Versatile Biomedical Applications: Current Advances and Challenges Ahead

Han Lin et al.

ADVANCED SCIENCE (2018)

添加到收藏夹

Article Chemistry, Physical

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

Zhongrui Wang et al.

NATURE MATERIALS (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Sub-10 nm Nanopattern Architecture for 2D Material Field-Effect Transistors

Kai Xu et al.

NANO LETTERS (2017)

添加到收藏夹

Article Engineering, Chemical

Big Data Analytics for Smart Manufacturing: Case Studies in Semiconductor Manufacturing

James Moyne et al.

PROCESSES (2017)

添加到收藏夹

Article Chemistry, Multidisciplinary

Fundamental Limits on the Subthreshold Slope in Schottky Source/Drain Black Phosphorus Field-Effect Transistors

Nazila Haratipour et al.

ACS NANO (2016)

添加到收藏夹

Article Multidisciplinary Sciences

A steep-slope transistor based on abrupt electronic phase transition

Nikhil Shukla et al.

NATURE COMMUNICATIONS (2015)

添加到收藏夹

Article Multidisciplinary Sciences

Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

Huiliang Wang et al.

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA (2014)

添加到收藏夹

Article Engineering, Electrical & Electronic

Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

Benedict Ofuonye et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2014)

添加到收藏夹

Article Physics, Applied

WSe2 field effect transistors with enhanced ambipolar characteristics

Saptarshi Das et al.

APPLIED PHYSICS LETTERS (2013)

添加到收藏夹

Article Chemistry, Multidisciplinary

From Bulk to Monolayer MoS2: Evolution of Raman Scattering

Hong Li et al.

ADVANCED FUNCTIONAL MATERIALS (2012)

添加到收藏夹

Article Engineering, Electrical & Electronic

Vertical Si-Nanowire n-Type Tunneling FETs With Low Subthreshold Swing (≤ 50 mV/decade) at Room Temperature

Ramanathan Gandhi et al.

IEEE ELECTRON DEVICE LETTERS (2011)

添加到收藏夹

Review Multidisciplinary Sciences

Tunnel field-effect transistors as energy-efficient electronic switches

Adrian M. Ionescu et al.

NATURE (2011)

添加到收藏夹

Article Nanoscience & Nanotechnology

Single-layer MoS2 transistors

B. Radisavljevic et al.

NATURE NANOTECHNOLOGY (2011)

添加到收藏夹

Article Chemistry, Multidisciplinary

Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature

Fengnian Xia et al.

NANO LETTERS (2010)

添加到收藏夹

Article Engineering, Electrical & Electronic

Low-subthreshold-swing tunnel transistors

Q Zhang et al.

IEEE ELECTRON DEVICE LETTERS (2006)

添加到收藏夹

Article Engineering, Electrical & Electronic

GaN enhancement/depletion-mode FET logic for mixed signal applications

M Micovic et al.

ELECTRONICS LETTERS (2005)

添加到收藏夹

© Peeref 2019-2024. All rights reserved.