Electrical performance study of Schottky barrier diodes using ion implanted 13-Ga2O3 epilayers grown on sapphire substrates

13-Ga2O3 epilayers with a 210 nm thickness were successfully grown on c-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Highly resistive unintentionally doped (UID) epilayers are studied, as are Si ion-implantated samples with doses of 1x1014, 6x1014 and 1x1015 cm -2 at 30 keV to improve 13-Ga2O3 epilayer conductivity. Schottky barrier diodes (SBDs) were fabricated using opti-mized growth parameters and electrical measurements performed for both UID and Si-implanted 13-Ga2O3 material. The forward current density (J) of an UID SBD at 2 V was 62 nA/cm2 with breakdown voltage (Vbr) of 1.03 kV and leakage J of 10 mu A/cm2. The forward J improved by eight orders of magnitude after Si implantation. In this case, Vbr reduced to 680 V combined with a high leakage J of-A/cm2 for doses of 1x1015cm-2. A hard breakdown of 553 V was achieved with a Si-ion dose of 1x1014 cm -2 with comparatively less leakage than samples with higher dose amounts. (c) 2023 The Author(s). Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).

Automated summary

13-Ga2O3 epilayers with a thickness of 210 nm were grown on c-plane sapphire substrate by MOCVD. The conductivity of the 13-Ga2O3 epilayer was improved by Si ion-implantation at doses of 1x1014, 6x1014, and 1x1015 cm-2. Schottky barrier diodes were fabricated and showed significant improvement in forward current density and breakdown voltage after Si implantation.